IXTP98N075T

© 2007 IXYS CORPORATION, All rights reserved
TrenchMV
TM
Power MOSFET
N-Channel Enhancement Mode
IXTA98N075T
IXTP98N075T
V
DSS
=75 V
I
D25
=98 A
R
DS(on)
10 m
ΩΩ
ΩΩ
Ω
DS99541(04/07)
G = Gate D = Drain
S = Source TAB = Drain
TO-263 (IXTA)
TO-220 (IXTP)
Symbol Test Conditions Maximum Ratings
V
DSS
T
J
= 25°C to 175°C75V
V
DGR
T
J
= 25°C to 175°C; R
GS
= 1 MΩ 75 V
V
GSM
Transient ± 20 V
I
D25
T
C
= 25°C98A
I
LRMS
Package Current Limit (RMS): 75 A
I
DM
T
C
= 25°C, pulse width limited by T
JM
280 A
dv/dt I
S
I
DM
, di/dt 100 A/μs, V
DD
V
DSS
5 V/ns
T
J
175°C, R
G
= 5 Ω
I
AR
T
C
= 25°C25A
E
AS
T
C
= 25°C 600 mJ
P
d
T
C
= 25°C 230 W
T
J
-55 ... +175 °C
T
JM
175 °C
T
stg
-40 ... +175 °C
T
L
1.6 mm (0.062 in.) from case for 10 s 300 °C
T
SOLD
Plastic body for 10 seconds 260 °C
M
d
Mounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-220 3.0 g
TO-263 2.5 g
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
BV
DSS
V
GS
= 0 V, I
D
= 250 μA75V
V
GS(th)
V
DS
= V
GS
, I
D
= 100 μA 2.0 4.0 V
I
GSS
V
GS
= ±20 V, V
DS
= 0 V ± 200 nA
I
DSS
V
DS
= V
DSS
2 μA
V
GS
= 0 V T
J
= 150°C 150 μA
R
DS(on)
V
GS
= 10 V, I
D
= 25 A, Notes 1, 2 10 mΩ
G
S
TAB
TAB
G
S
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
Advance Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA98N075T IXTP98N075T
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 1 38 64 S
C
iss
3100 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 520 pF
C
rss
125 pF
t
d(on)
Resistive Switching Times 20 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 42 ns
t
d(off)
R
G
= 5 Ω (External) 42 ns
t
f
27 ns
Q
g(on)
68 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25 A 18 nC
Q
gd
15 nC
R
thJC
0.65°C/W
R
thCS
0.50 °C/W
Source-Drain Diode
Symbol Test ConditionsCharacteristic Values
(T
J
= 25°C unless otherwise specified) Min. Typ. Max.
I
S
V
GS
= 0 V 98 A
I
SM
Repetitive 280 A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.5 V
t
rr
I
F
= 49 A, -di/dt = 100 A/μs50ns
V
R
= 40 V, V
GS
= 0 V
Note 1. Pulse test, t 300 μs, duty cycle, d 2 %;
2. On through-hole packages, R
DS(on)
Kelvin test contact
location is 5 mm or less from the package body.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experience,
and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change
limits, test conditions, and dimensions without notice.
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-220 (IXTP) Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-263 (IXTA) Outline
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

IXTP98N075T

Mfr. #:
Manufacturer:
Description:
MOSFET 98 Amps 75V 9.0 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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