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T660N26TOFXPSA1
P1-P3
P4-P6
P7-P9
P10-P10
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T660N
IFBIP D AEC / 2009-03-04, H.Sandmann
A
04
/
09
7/10
Seite/page
Tc
DC
1
80°
12
0
°
90°
60
°
θ
=
3
0°
0
50
0
10
00
15
00
20
00
25
00
30
00
0
20
0
40
0
6
00
8
00
1
00
0
1
20
0
1
40
0
1
6
00
I
TAV
[A
]
P
TA
V
[W
]
0°
0
18
0°
Durchlassverlustleistung /
On-state power loss
P
TA
V
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
DC
18
0°
120°
90°
60°
θ
=
3
0
°
20
40
60
80
100
120
140
0
20
0
4
00
6
00
80
0
1
00
0
12
00
14
00
1
600
I
TA
V
[A
]
T
C
[°
C
]
0°
0
18
0°
Höchstzulässige Geh
äusetemperatur / Maximum allow
able case temperature T
C
= f(I
TAV
)
Rechteckförmiger Strom / Rectangular current
Beidseitige Kühlung / T
wo-sided cooling
Parameter: Stromflusswinkel
Θ
/ Current conduction angle
Θ
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T660N
IFBIP D AEC / 2009-03-04, H.Sandmann
A
04
/
09
8/10
Seite/page
Steuerkennlinie
Zündverzug
0,1
1
10
100
10
100
1000
10000
i
G
[mA
]
v
G
[V]
T
vj
=
+125°C
T
vj
=
-40 °C
T
vj
=
+25°C
a
b
c
Steuercharakteristik v
G
= f (i
G
) mit Zündbereichen für V
D
= 12 V
Gate characteristic v
G
= f (i
G
) with triggering area for V
D
= 12 V
Höchstzulässige Spitzens
teuerverlustleistung / Maximum rat
ed peak gate power dissipation P
GM
= f (t
g
) :
a - 20W / 10ms b - 40W / 1ms c - 60W / 0,5ms
100
1000
10000
1
10
100
-di/dt [A/µs]
Q
r
[µAs
]
500A
1000A
20A
50A
100A
200A
i
TM
=
2000A
Sperrverzögerungsla
dung / Recovered charge Q
r
= f(di/dt)
T
vj
= T
vjmax
, v
R
≤
0,5 V
RRM
, V
RM
= 0,8 V
RRM
Parameter: Durchlassstro
m / On-state current i
TM
N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T660N
IFBIP D AEC / 2009-03-04, H.Sandmann
A
04
/
09
9/10
Seite/page
0-
50V
0,33 VRRM
0,67 VRR
M
0
2
4
6
8
10
12
14
123
4567
89
1
0
1
1
1
2
1
3
1
4
1
5
1
6
1
7
A
n
z
ah
l
Pu
lse bei 50Hz
S
inu
s
H
albwe
llen
N
u
m
ber o
f
pu
lses
f
o
r 50H
z
sin
u
soid
al h
alf
waves
I
T(O
V
)M
[k
A
]
Typische Abhängi
gkeit des Grenzstromes I
T(OV)M
von der Anza
hl für eine Folge v
on Sinus
Halbwellen bei 50H
z. Parameter: Rück
wärtsspannung V
RM
Typical depende
ncy of maximum ov
erload on-state current I
T(OV)M
as a number of a s
equence of
sinusoidal half waves at 50Hz. Parameter:
peak reverse voltage V
RM
I
T(OV)M
= f (pulses
, V
RM
) ; T
vj
= T
vjmax
P1-P3
P4-P6
P7-P9
P10-P10
T660N26TOFXPSA1
Mfr. #:
Buy T660N26TOFXPSA1
Manufacturer:
Infineon Technologies
Description:
SCR MODULE 2600V 1500A DO200AB
Lifecycle:
New from this manufacturer.
Delivery:
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