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NTHD4508NT1G

P1-P3P4-P6
Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 3
1 Publication Order Number:
NTHD4508N/D
NTHD4508N
Power MOSFET
20 V, 4.1 A, Dual N−Channel ChipFET
Features
• Low R
DS(on)
and Fast Switching Speed
• Leadless ChipFET Package has 40% Smaller Footprint than TSOP−6
• Excellent Thermal Capabilities Where Heat Transfer is Required
• Pb−Free Package is Available
Applications
• DC−DC Buck/Boost Converters
• Battery and Low Side Switching in Portable Equipment Such as MP3
Players, Cell Phones, DSCs and PDAs
• Level Shifting
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Parameter Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
±12 V
Continuous Drain
Current
Stead
y
T
J
= 25 °C
I
D
3.0
A
Current
Steady
State
T
J
= 85 °C 2.2
t 5 s T
J
= 25 °C 4.1
Power Dissipation
Stead
y
T
J
= 25 °C
P
D
1.13
W
Steady
State
T
J
= 85 °C 0.59
t 5 s T
J
= 25 °C 2.1
Pulsed Drain Current t
p
= 10 µs I
DM
12 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State
(Note 1)
R
θ
JA
110 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
Device Package Shipping
†
ORDERING INFORMATION
NTHD4508NT1 ChipFET 3000/Tape & Reel
ChipFET
CASE 1206A
STYLE 2
http://onsemi.com
20 V
80 m @ 2.5 V
60 m @ 4.5 V
R
DS(on)
TYP
4.1 A
I
D
MAXV
(BR)DSS
N−Channel MOSFET
MARKING
DIAGRAM
1
2
3
4
S
1
G
1
S
2
G
2
D
1
D
1
D
2
D
2
PIN
CONNECTIONS
NTHD4508NT1G
ChipFET
(Pb−Free)
3000/Tape & Reel
8
7
6
5
5
6
7
81
2
3
4
D
1
, D
2
G
1
, G
2
S
1
, S
2
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
C8
M
C8 = Specific Device Code
M = Month Code
NTHD4508N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Parameter
Symbol Test Conditions Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V 20 V
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V, V
DS
= 16 V 1.0
A
V
GS
= 0 V, V
DS
= 16 V, T
J
= 125°C 10
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= 12 V 100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= 250 A 0.6 1.2 V
Drain−to−Source On−Resistance R
DS(on)
V
GS
= 4.5, I
D
= 3.1 A 60 75
m
()
V
GS
= 2.5, I
D
= 2.3 A 80 115
Forward Transconductance g
FS
V
DS
= 10 V, I
D
= 3.1 A 6.0 S
CHARGES AND CAPACITANCES
Input Capacitance C
ISS
V 0V f 10MH
180
pF
Output Capacitance C
OSS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 10 V
80
Reverse Transfer Capacitance C
RSS
V
DS
=
10
V
25
Total Gate Charge Q
G(TOT)
2.6 4.0
nC
Threshold Gate Charge Q
G(TH)
V
GS
= 4.5 V, V
D
S
= 10 V,
0.5
Gate−to−Source Charge Q
GS
V
GS
=
4
.
5
V
,
V
DS
=
10
V
,
I
D
= 3.1 A
0.6
Gate−to−Drain Charge Q
GD
0.7
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time t
d(ON)
5.0 10
ns
Rise Time t
r
V
GS
= 4.5 V, V
D
S
= 16 V,
15 30
Turn−Off Delay Time t
d(OFF)
V
GS
=
4
.
5
V
,
V
DS
=
16
V
,
I
D
= 3.1 A, R
G
= 2.5
10 20
Fall Time t
f
3.0 6.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V, I
S
= 3.1 A 0.75 1.15 V
Reverse Recovery Time t
RR
12.5
ns
Charge Time ta
V
GS
= 0 V, I
S
= 1.5 A,
9.0
Discharge Time tb
V
GS
=
0
V
,
I
S
=
1
.
5
A
,
dI
S
/dt = 100 A/s
3.5
Reverse Recovery Charge Q
RR
6.0 nC
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTHD4508N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES (T
J
= 25°C unless otherwise noted)
2 V
100°C
0
8
5
6
632
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
4
2
0
1
Figure 1. On−Region Characteristics
0
8
21.5 2.5
6
4
2
1
0
3
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
35
0.10
0.05
0
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE ()
I
D,
DRAIN CURRENT (AMPS)
17
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
1.5
1.3
1.1
0.9
0.7
50 125100
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
T
J
= 25°C
0.15
24
T
C
= −55°C
I
D
= 3.1 A
T
J
= 25°C
0.1
0.04
75 150
T
J
= 25°C
I
D
= 3.1 A
V
GS
= 4.5 V
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
25°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE ()
1.7
V
GS
= 4.5 V
16
24 8
1
2016
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
12
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 100°C
1.4 V
1.6 V
1.8 V
V
GS
= 2.5 V
10
100
78
2.2 V
V
DS
≥ 10 V
35
0.07
610 1814
V
GS
= 2.4 V
V
GS
= 5 V to 3 V
910
0.5
0
P1-P3P4-P6

NTHD4508NT1G

Mfr. #:
Buy NTHD4508NT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 20V 4.1A Dual N-Channel
Lifecycle:
New from this manufacturer.
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