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IRF9510STRLPBF

P1-P3P4-P6P7-P9
Document Number: 91073
www.vishay.com
S11-1050-Rev. C, 30-May-11 1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Power MOSFET
IRF9510S, SiHF9510S
Vishay Siliconix
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
•Fast Switching
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= - 25 V, starting T
J
= 25 °C, L = 18 mH, R
g
= 25 , I
AS
= - 4.0 A (see fig. 12).
c. I
SD
- 4.0 A, dI/dt 75 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) - 100
R
DS(on)
()V
GS
= - 10 V 1.2
Q
g
(Max.) (nC) 8.7
Q
gs
(nC) 2.2
Q
gd
(nC) 4.1
Configuration Single
S
G
D
P-Channel MOSFET
D
2
PAK (TO-263)
G
D
S
ORDERING INFORMATION
Package D
2
PAK (TO-263) D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free SiHF9510S-GE3 SiHF9510STRL-GE3
a
Lead (Pb)-free
IRF9510SPbF IRF9510STRLPbF
a
SiHF9510S-E3 SiHF9510STL-E3
a
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
- 100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at - 10 V
T
C
= 25 °C
I
D
- 4.0
AT
C
= 100 °C - 2.8
Pulsed Drain Current
a
I
DM
- 16
Linear Derating Factor 0.29
W/°C
Linear Derating Factor (PCB Mount)
e
0.025
Single Pulse Avalanche Energy
b
E
AS
200 mJ
Avalanche Current
a
I
AR
- 4.0 A
Repetiitive Avalanche Energy
a
E
AR
4.3 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
43
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 3.7
Peak Diode Recovery dV/dt
c
dV/dt - 5.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature) for 10 s 300
d
* Pb containing terminations are not RoHS compliant, exemptions may apply
www.vishay.com Document Number: 91073
2 S11-1050-Rev. C, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9510S, SiHF9510S
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum Junction-to-Ambient R
thJA
-62
°C/W
Maximum Junction-to-Ambient
(PCB Mount)
a
R
thJA
-40
Maximum Junction-to-Case (Drain) R
thJC
-3.5
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= - 250 μA - 100 - - V
V
DS
Temperature Coefficient V
DS
/T
J
Reference to 25 °C, I
D
= - 1 mA - - 0.091 - V/°C
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= - 250 μA - 2.0 - - 4.0 V
Gate-Source Leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= - 100 V, V
GS
= 0 V - - - 100
μA
V
DS
= - 80 V, V
GS
= 0 V, T
J
= 150 °C - - - 500
Drain-Source On-State Resistance R
DS(on)
V
GS
= - 10 V I
D
= - 2.4 A
b
--1.2
Forward Transconductance g
fs
V
DS
= - 50 V, I
D
= - 2.4 A
b
1.0 - - S
Dynamic
Input Capacitance C
iss
V
GS
= 0 V,
V
DS
= - 25 V,
f = 1.0 MHz, see fig. 5
- 200 -
pFOutput Capacitance C
oss
-94-
Reverse Transfer Capacitance C
rss
-18-
Total Gate Charge Q
g
V
GS
= - 10 V
I
D
= - 4.0 A, V
DS
= - 80 V,
see fig. 6 and 13
b
--8.7
nC Gate-Source Charge Q
gs
--2.2
Gate-Drain Charge Q
gd
--4.1
Turn-On Delay Time t
d(on)
V
DD
= - 50 V, I
D
= - 4.0 A,
R
g
= 24 , R
D
= 11 , see fig. 10
b
-10-
ns
Rise Time t
r
-27-
Turn-Off Delay Time t
d(off)
-15-
Fall Time t
f
-17-
Internal Drain Inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal Source Inductance L
S
-7.5-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--- 4.0
A
Pulsed Diode Forward Current
a
I
SM
--- 16
Body Diode Voltage V
SD
T
J
= 25 °C, I
S
= - 4.0 A, V
GS
= 0 V
b
--- 5.5V
Body Diode Reverse Recovery Time t
rr
T
J
= 25 °C, I
F
= - 4.0 A, dI/dt = 100 A/μs
b
- 82 160 ns
Body Diode Reverse Recovery Charge Q
rr
- 0.15 0.30 μC
Forward Turn-On Time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G
Document Number: 91073 www.vishay.com
S11-1050-Rev. C, 30-May-11 3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRF9510S, SiHF9510S
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 175 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
- V
DS
, Drain-to-Source Voltage (V)
- I
D
, Drain Current (A)
91073_01
20 µs Pulse Width
T
C
= 25 °C
- 4.5 V
10
0
10
1
10
1
10
0
Bottom
To p
V
GS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
91071_02
10
1
10
0
10
0
10
1
I
D
, Drain Current (A)
4.5 V
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
= 150 °C
V
DS
,
Drain-to-Source Voltage (V)
- V
GS
,
Gate-to-Source Voltage (V)
- I
D
, Drain Current (A)
20 µs Pulse Width
V
DS
= - 50 V
10
1
10
0
5678910
4
25 °C
175 °C
91073_03
91071_04
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
J
,
Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 8.0 A
V
GS
= 10 V
P1-P3P4-P6P7-P9

IRF9510STRLPBF

Mfr. #:
Buy IRF9510STRLPBF
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-Chan 100V 4.0 Amp
Lifecycle:
New from this manufacturer.
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