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VS-ETU3006-1HM3

P1-P3P4-P6
VS-ETU3006SHM3, VS-ETU3006-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
1
Document Number: 94702
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Rectifier, 30 A FRED Pt
®
FEATURES
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
• Low leakage current
• AEC-Q101 qualified, meets JESD 201 class
1A whisker test
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Ultralow V
F
, soft-switching ultrafast rectifiers optimized for
Discontinuous (Critical) Mode (DCM) Power Factor
Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
PRODUCT SUMMARY
Package TO-263AB (D
2
PAK), TO-262AA
I
F(AV)
30 A
V
R
600 V
V
F
at I
F
1.15 V
t
rr
(typ.) 30 ns
T
J
max. 175 °C
Diode variation Single die
TO-262AATO-263AB (D
2
PAK)
N/C
Anode
1
3
2
Anode
1
3
Base
cathode
2
N/C
V
S-ETU3006SHM3 VS-ETU3006-1HM3
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage V
RRM
600 V
Average rectified forward current I
F(AV)
T
C
= 113 °C 30
A
Non-repetitive peak surge current I
FSM
T
C
= 25 °C 200
Operating junction and storage temperatures T
J
, T
Stg
-65 to +175 °C
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage,
blocking voltage
V
BR
,
V
R
I
R
= 100 μA 600 - -
V
Forward voltage V
F
I
F
= 30 A - 1.4 2.0
I
F
= 30 A, T
J
= 150 °C - 1.15 1.35
Reverse leakage current I
R
V
R
= V
R
rated - 0.02 30
μA
T
J
= 150 °C, V
R
= V
R
rated - 30 250
Junction capacitance C
T
V
R
= 600 V - 20 - pF
Series inductance L
S
Measured lead to lead 5 mm from package body - 8.0 - nH
VS-ETU3006SHM3, VS-ETU3006-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
2
Document Number: 94702
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time t
rr
I
F
= 1 A, dI
F
/dt = 50 A/μs, V
R
= 30 V - 30 45
nsT
J
= 25 °C
I
F
= 30 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
-45-
T
J
= 125 °C - 100 -
Peak recovery current I
RRM
T
J
= 25 °C - 5.6 -
A
T
J
= 125 °C - 10 -
Reverse recovery charge Q
rr
T
J
= 25 °C - 127 -
nC
T
J
= 125 °C - 580 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-65 - 175 °C
Thermal resistance,
junction to case
R
thJC
- 0.95 1.4 °C/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 70
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and
greased
-0.5-
Weight
-2.0- g
-0.07- oz.
Mounting torque
6
(5)
-
12
(10)
kgf · cm
(lbf · in)
Marking device
Case style TO-263AB (D
2
PAK) ETU3006SH
Case style TO-262 ETU3006-1H
V
FM
-
Forward Voltage Drop (V)
I
F
-
Instantaneous Forward Current (A)
0.0 0.5 1.0 1.5 2.0 2.5
1
10
100
1000
T
J
= 25 °C
T
J
= 150 °C
T
J
= 175 °C
V
R
-
Reverse Voltage (V)
I
R
-
Reverse Current (μA)
0 100 200 300 400 500 600
0.001
0.01
0.1
1
10
100
1000
150°C
175°C
25°C
50°C
75°C
125°C
100°C
VS-ETU3006SHM3, VS-ETU3006-1HM3
www.vishay.com
Vishay Semiconductors
Revision: 10-Jul-15
3
Document Number: 94702
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Max. Thermal Impedance Z
thJC
Characteristics
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
V
R
-
Reverse Voltage (V)
C
T
-
Capacitance (pF)
0 100 200 300 400 500 600
1
10
100
1000
Thermal Impedance Z
thJC
(°C/W)
t
1
-
Rectangular Pulse Duration (s)
Z
thJC
-
Thermal Impedance (°C/W)
1E-05 1E-04 1E-03 1E-02 1E-0 1E+00
0.01
0.1
1
10
Single Pulse
(Thermal Resistance)
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
D = 0.01
Allowable Case Temperature (°C)
I
F(AV)
- Average Forward Current (A)
0 5 10 15 20 25 30 35 40 45
90
100
110
120
130
140
150
160
170
180
DC
Average Power Loss (W)
I
F(AV)
- Average Forward Current (A)
0 5 10 15 20 25 30 35 40 45
0
20
10
30
40
50
60
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
RMS Limit
P1-P3P4-P6

VS-ETU3006-1HM3

Mfr. #:
Buy VS-ETU3006-1HM3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 30 Amp 600 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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