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IRF6665TRPBF

P1-P3P4-P6P7-P9P10-P10
www.irf.com 1
08/25/06
IRF6665PbF
IRF6665TRPbF
Notes through are on page 2
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
DIGITAL AUDIO MOSFET
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse
recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as
efficiency, THD, and EMI.
The IRF6665PbF device utilizes DirectFET
TM
packaging technology. DirectFET
TM
packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients. The DirectFET
TM
package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The
DirectFET
TM
package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis-
tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for
Class-D audio amplifier applications.
Features
• Latest MOSFET Silicon technology
• Key parameters optimized for Class-D audio amplifier
applications
• Low R
DS(on)
for improved efficiency
• Low Q
g
for better THD and improved efficiency
• Low Q
rr
for better THD and lower EMI
• Low package stray inductance for reduced ringing and lower
EMI
• Can deliver up to 100W per channel into 8Ω with no heatsink
• Dual sided cooling compatible
· Compatible with existing surface mount technologies
· RoHS compliant containing no lead or bromide
·Lead-Free (Qualified up to 260°C Reflow)
Absolute Maximum Ratings
Parameter Units
V
DS
Drain-to-Source Voltage V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
A
= 70°C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Maximum Power Dissipation
W
P
D
@T
A
= 25°C
Power Dissipation
P
D
@T
A
= 70°C
Power Dissipation
Linear Derating Factor W/°C
T
J
Operating Junction and °C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
R
θ
JA
Junction-to-Ambient
––
–
58 °C/W
R
θ
JA
Junction-to-Ambient
12.5 ––
–
R
θ
JA
Junction-to-Ambient
20 ––
–
R
θ
JC
Junction-to-Case
––
–
3.0
R
θ
J-PCB
Junction-to-PCB Mounted
1.4 ––
–
42
Max.
4.2
3.4
34
100
± 20
19
-40 to + 150
0.017
2.2
1.4
V
DS
100 V
R
DS
(
on
)
typ. @ V
GS
= 10V 53
m
:
Q
g
typ.
8.7 nC
R
G(int)
typ.
1.9
Key Parameters
SQ SX ST
SH
MQ MX MT MN
DirectFET ISOMETRIC
SH
PD - 97230A
IRF6665PbF
2 www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.89mH, R
G
= 25Ω, I
AS
= 5.0A.
Surface mounted on 1 in. square Cu board.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
T
C
measured with thermal couple mounted to top
(Drain) of part.
R
θ
is measured at T
J
of approximately 90°C.
Based on testing done using a typical device & evaluation board
at Vbus=±45V, f
SW
=400KHz, and T
A
=25°C. The delta case
temperature ∆T
C
is 55°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 53 62
mΩ
V
GS(th)
Gate Threshold Voltage 3.0 ––– 5.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
R
G(int)
Internal Gate Resistance ––– 1.9 2.9
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 6.6 ––– ––– S
Q
g
Total Gate Charge ––– 8.4 13
V
DS
= 50V
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 2.2 –––
V
GS
= 10V
Q
gs2
Post-Vth Gate-to-Source Charge ––– 0.64 –––
I
D
= 5.0A
Q
gd
Gate-to-Drain Charge ––– 2.8 ––– nC See Fig. 6 and 17
Q
godr
Gate Charge Overdrive ––– 2.8 –––
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 3.4 –––
t
d(on)
Turn-On Delay Time ––– 7.4 –––
t
r
Rise Time ––– 2.8 –––
t
d(off)
Turn-Off Delay Time ––– 14 ––– ns
t
f
Fall Time ––– 4.3 –––
C
iss
Input Capacitance ––– 530 –––
C
oss
Output Capacitance ––– 110 –––
C
rss
Reverse Transfer Capacitance ––– 29 ––– pF
C
oss
Output Capacitance ––– 510 –––
C
oss
Output Capacitance ––– 67 –––
C
oss
eff.
Effective Output Capacitance ––– 130 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy mJ
I
AR
Avalanche Current A
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 38
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 34
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
r
r
Reverse Recovery Time ––– 31 ––– ns
Q
r
r
Reverse Recovery Charge ––– 37 ––– nC
Typ.
–––
–––
Conditions
V
DS
= 10V, I
D
= 5.0A
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
11
5.0
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.0A, V
DD
= 25V
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.0A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
Max.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
V
DD
= 50V
I
D
= 5.0A
R
G
= 6.0Ω
V
GS
= -20V
IRF6665PbF
www.irf.com 3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 5.0A
V
GS
= 10V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
2 4 6 8 10 12
V
GS
, Gate-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= -40°C
T
J
= 25°C
T
J
= 150°C
V
DS
= 25V
≤
60µs PULSE WIDTH
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
≤
60µs PULSE WIDTH
Tj = 25°C
6.0V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
6.0V
≤
60µs PULSE WIDTH
Tj = 150°C
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
BOTTOM 6.0V
0246810
Q
G
Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 80V
V
DS
= 50V
V
DS
= 20V
I
D
= 5.0A
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IRF6665TRPBF

Mfr. #:
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Manufacturer:
Infineon Technologies
Description:
MOSFET 100V 1 x N-CH HEXFET for Digital Audio
Lifecycle:
New from this manufacturer.
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