AD8672TRZ-EP

AD8672-EP Enhanced Product
Rev. 0 | Page 4 of 8
ELECTRICAL CHARACTERISTICS, ±15 V
V
S
= ±15.0 V, V
CM
= 0 V, T
A
= 25°C, unless otherwise specified.
Table 2.
Parameter Symbol Test Conditions/Comments Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage V
OS
20 75 μV
−55°C < T
A
< +125°C 30 125 μV
Offset Voltage Drift ∆V
OS
/∆T −55°C < T
A
< +125°C 0.3 0.8 μV/°C
Input Bias Current I
B
−14 +3 +14 nA
25°C < T
A
< 125°C −20 +5 +20 nA
−55°C < T
A
< +125°C −60 +8 +60 nA
Input Offset Current I
OS
−14 +6 +14 nA
25°C < T
A
< 125°C −20 +6 +20 nA
−55°C < T
A
< +125°C −60 +8 +60 nA
Input Voltage Range −12 +12 V
Common-Mode Rejection Ratio CMRR V
CM
= −12 V to +12 V 100 120 dB
Large Signal Voltage Gain A
VO
R
L
= 2 kΩ, V
O
= −10 V to +10 V 1000 6000 V/mV
Input Capacitance
Common Mode C
INCM
6.25 pF
Differential Mode C
INDM
7.5 pF
Input Resistance
Common Mode R
IN
3.5
Differential Mode R
INDM
15
OUTPUT CHARACTERISTICS
Output Voltage
High V
OH
R
L
= 2 kΩ, −55°C to +125°C 13.2 13.8 V
R
L
= 600 Ω 11 12.3 V
Low V
OL
R
L
= 2 kΩ, −55°C to +125°C −13.8 −13.2 V
R
L
= 600 Ω −12.4 −11 V
Output Current I
OUT
±20 mA
Short Circuit Current I
SC
±30 mA
POWER SUPPLY
Power Supply Rejection Ratio PSRR V
S
= ±4 V to ±18 V 110 130 dB
Supply Current per Amplifier I
SY
V
O
= 0 V 3 3.5 mA
−55°C < T
A
< +125°C 4.2 mA
DYNAMIC PERFORMANCE
Slew Rate SR R
L
= 2 kΩ 4 V/μs
Settling Time t
S
To 0.1% (10 V step, G = 1) 2.2 μs
To 0.01% (10 V step, G = 1) 6.3 μs
Gain Bandwidth Product GBP 10 MHz
NOISE PERFORMANCE
Peak-to-Peak Noise e
n p-p
0.1 Hz to 10 Hz 77 100 nV p-p
Voltage Noise Density e
n
f = 1 kHz 2.8 3.8 nV/√Hz
Current Noise Density i
n
f = 1 kHz 0.3 pA/√Hz
Channel Separation C
S
f = 1 kHz −130 dB
f = 10 kHz −105 dB
Enhanced Product AD8672-EP
Rev. 0 | Page 5 of 8
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter Rating
Supply Voltage 36 V
Input Voltage
V
S−
to V
S+
Differential Input Voltage ±0.7 V
Output Short-Circuit Duration Indefinite
Storage Temperature Range −65°C to +150°C
Operating Temperature Range −55°C to +125°C
Junction Temperature Range −65°C to +150°C
Lead Temperature Range (Soldering, 60 sec) 300°C
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
THERMAL RESISTANCE
θ
JA
is specified for the worst-case conditions, that is, θ
JA
is
specified for the device soldered on a 4-layer circuit board for
surface-mount packages.
Table 4.
Package Type
θ
JA
θ
JC
Unit
8-Lead SOIC_N (R-8) 120 43 °C/W
ESD CAUTION
AD8672-EP Enhanced Product
Rev. 0 | Page 6 of 8
TYPICAL PERFORMANCE CHARATERISTICS
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
–75 –25
25 75
125–50
0 50
100
SUPPLY CURRENT (mA)
TEMPERATURE (°C)
13063-101
V
S
= ±5V
V
S
= ±15V
Figure 2. Supply Current vs. Temperature
–75 –25
25 75 125–50 0
50 100
100
–100
–80
–60
–40
–20
0
20
40
60
80
V
OS
(µV)
TEMPERATURE (°C)
MEAN + 3σ
MEAN – 3σ
MEAN
V
S
= ±5V
T
A
= –55°C TO +125°C
13063-102
Figure 3. Input Offset Voltage (V
OS
) vs. Temperature, V
S
= ±5 V
Figure 4. Input Offset Voltage Drift (TCV
OS
) Distribution, V
S
= ±5 V
–75 –25 25 75 125–50 0 50 100
PSRR (dB)
TEMPERATURE (°C)
127
128
129
130
131
132
133
134
135
V
S
= ±2.5V TO ±18V
13063-104
Figure 5. PSRR vs. Temperature
–75 –25 25
75 125–50
0 50 100
100
–100
–80
–60
–40
–20
0
20
40
60
80
V
OS
(µV)
TEMPERATURE (°C)
MEAN + 3σ
MEAN – 3
σ
MEAN
V
S
= ±15V
T
A
= –55°C TO +125°C
13063-105
Figure 6. Input Offset Voltage (V
OS
) vs. Temperature, V
S
= ±15 V
Figure 7. Input Offset Voltage Drift (TCV
OS
) Distribution, V
S
= ±15 V

AD8672TRZ-EP

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Precision Amplifiers DUAL PRECISION LOW NOISE BIPOLAR AMP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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