DTA143ESATP

DTA143EM / DTA143EE / DTA143EUA
Transistors DTA143EKA / DTA143ESA
Rev.B 1/3
-100mA / -50V Digital transistors
(with built-in resistors)
DTA143EM / DTA143EE / DTA143EUA /
DTA143EKA / DTA143ESA
z
Applications
Inverter, Interface, Driver
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Features
1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making the device design easy.
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Structure
PNP epitaxial planar silicon transistor (Resistor built-in type)
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External dimensions (Unit : mm)
Abbreviated symbol : 13
Abbreviated symbol : 13
Abbreviated symbol : 13
Abbreviated symbol : 13
Abbreviated symbol : A143ES
(1) IN
(2) GND
(3) OUT
ROHM : VMT3
DTA143EM
(1) GND
(2) IN
(3) OUT
ROHM : EMT3
DTA143EE
1.6
0.7
0.15
0.1Min.
0.55
0.2
1.6
1.0
0.3
0.8
(
2
)
0.5
0.5
(
3
)
0.2
(
1
)
(1) GND
(2) OUT
(3) IN
ROHM : SPT
EIAJ : SC-72
DTA143ESA
(1) GND
(2) IN
(3) OUT
ROHM : SMT3
EIAJ : SC-59
DTA143EKA
(1) GND
(2) IN
(3) OUT
ROHM : UMT3
EIAJ : SC-70
DTA143EUA
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4 0.4
1.2
0.8
0.2
0.2
(
2
)
(
1
)
0.2
0.15
0.1Min.
0.9
0.7
1.25
2.1
0.3
(
3
)
0.65
(
2
)
2.0
1.3
(
1
)
0.65
0.45
2.5
(1) (2) (3)
(15Min.)
5.0
3.0
3Min.
0.45
0.5
4.0 2.0
(
2
)
(
1
)
2.8
1.6
0.4
(
3
)
2.9
1.9
0.95 0.95
0.8
0.15
0.3Min.
1.1
DTA143EM / DTA143EE / DTA143EUA
Transistors DTA143EKA / DTA143ESA
Rev.B 2/3
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Packaging specifications
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Equivalent circuit
TL
UMT3EMT3 SMT3 SPT
DTA143EE
DTA143EM
Part No.
DTA143EUA
3000
T2L
VMT3
8000
T106
3000
T146
3000
TP
5000
DTA143EKA
DTA143ESA
Package
Packaging type
TapingTaping Taping Taping Taping
Code
Basic ordering
unit (pieces)
R
1
R
2
IN
GND(+)
OUT
IN
R
1
=R
2
=4.7kΩ
GND(+)
OUT
z
z
Absolute maximum ratings (Ta=25qC)
Limits
Parameter Symbol
V
CC
150 200 300
50
30 to +10
100
100
150
55 to +150
DTA143EEDTA143EM
DTA143EUA DTA143EKA DTA143ESA
V
V
mA
mW
°C
°C
V
IN
I
O
I
C(Max.)
P
D
Tj
Tstg
Unit
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
z
z
Electrical characteristics (Ta=25qC)
Parameter Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
R
1
G
I
R
2
/R
1
f
T
Min.
3
3.29
30
0.8
0.1
4.7
1
250
0.5
0.3
1.8
0.5
6.11
1.2
V
V
CC
=−5V, I
O
=−100μA
V
O
=−0.3V, I
O
=−20mA
I
O
/I
I
=−10mA/0.5mA
V
I
=−5V
V
CC
=−50V, V
I
=0V
V
O
=−5V, I
O
=−10mA
V
CE
=−10V, I
E
=5mA, f=100MHz
V
mA
μA
kΩ
−−
MHz
Typ. Max. Unit Conditions
Input voltage
Output voltage
Input current
Output current
Input resistance
DC current gain
Resistance ratio
Transition frequency
Characteristics of built-in transistor
DTA143EM / DTA143EE / DTA143EUA
Transistors DTA143EKA / DTA143ESA
Rev.B 3/3
z
Electrical characteristic curves
V
O
=−0.3V
INPUT VOLTAGE : V
I(on)
(V)
OUTPUT CURRENT : I
O
(A)
100
50
20
10
5
2
1
500m
200m
100m
100μ−1m 10m 100m200μ−2m 20m500μ−5m 50m
25°C
100°C
Ta=−40°C
Fig.1 Input voltage vs. output current
(ON characteristics)
V
CC
=−5V
0 3.0
10m
1μ
2m
5m
1m
200μ
500μ
100μ
20μ
50μ
10μ
2μ
5μ
0.5 1.0 1.5 2.0 2.5
INPUT VOLTAGE : V
I(off) (V)
OUTPUT CURRENT : Io
(A)
Ta=100°C
25°C
40°C
Fig.2 Output current vs. input voltage
(OFF characteristics)
V
O
=−5V
100μ−1m 10m 100m200μ−2m 20m500μ−5m 50m
DC CURRENT GAIN : GI
OUTPUT CURRENT : IO
(A)
1k
500
200
100
50
20
10
5
2
1
Ta
=
100
°
C
25
°
C
40
°
C
Fig.3 DC current gain vs. output
current
l
O
/l
I
=20
100μ−1m 10m 100m200μ−2m 20m500μ−5m 50m
1
500m
200m
100m
10m
50m
5m
20m
2m
1m
OUTPUT CURRENT : I
O
(A)
OUTPUT VOLTAGE : V
O(on)
(V)
Ta=100°C
25°C
40°C
Fig.4 Output voltage vs. output
current

DTA143ESATP

Mfr. #:
Manufacturer:
ROHM Semiconductor
Description:
Bipolar Transistors - Pre-Biased PNP 50V 100MA
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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