Features
■ RoHS compliant*
■ Protects four lines
■ Unidirectional and bidirectional
confi gurations
■ ESD protection: 30 kV max.
Applications
■ Audio/video inputs
■ RS-232, RS-422 and RS-423 data lines
■ Portable electronics
■ Medical sensors
CDNBS08-T03~T36C - TVS Diode Array Series
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Specifi cations are subject to change without notice.
Customers should verify actual device performance in their specifi c applications.
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components.
Bourns offers Steering Diode/Transient Voltage Suppressor Array diodes for surge and
ESD protection applications in an eight lead narrow body SOIC package size format.
TheTransient Voltage Suppressor Array series offer a choice of voltage types ranging
from 3 V to 36 V in unidirectional and bidirectional confi gurations. Bourns
®
Chip Diodes
conform to JEDEC standards, are easy to handle on standard pick and place
equipment and their fl at confi guration minimizes roll away.
The Bourns
®
device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and
IEC 61000-4-5 (Surge) requirements.
8765
1234
8765
1234
Electrical Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol
CDNBS08-
Unit
Uni-
T03
Bi-
T03C
Uni-
T05
Bi-
T05C
Uni-
T08
Bi-
T08C
Uni-
T12
Bi-
T12C
Uni-
T15
Bi-
T15C
Uni-
T24
Bi-
T24C
Uni-
T36
Bi-
T36C
Min. Breakdown Voltage @ 1 mA V
BR
3.3 6.0 8.5 13.3 16.7 26.7 40.0 V
Working Peak Voltage V
WM
3.0 5.0 8.0 12.0 15.0 24.0 36.0 V
Max. Clamping Voltage
V
C
@ I
P
= 1 A
1
V
C
8.0 9.8 13.4 19.0 24.0 43.0 51.0 V
Typ. Clamping Voltage
@ 8/20 µs V
C
@ I
PP
1
V
C
10.9 V
@ 43 A
13.5 V
@ 42 A
16.9 V
@ 34 A
25.9 V
@ 21 A
30.0 V
@ 17 A
49.0 V
@ 12 A
76.8 V
@ 9 A
V
Max. Leakage Current @ V
WM
I
D
125 20 10 1 1 1 1 µA
Max. Cap. Bidirectional @ 0 V,
1 MHz
C
J(SD)
450 308 300 105 80 50 45 pF
ESD Protection per IEC 61000-4-2
Contact - Min.
Contact - Max.
Air - Min.
Air - Max.
ESD
±8
±30
±15
±30
kV
Peak Pulse Power (t
p
= 8/20 µs)
2
P
PP
500 W
Forward Voltage @ 100 mA,
300 µs - Square Wave
3
V
F
1.5 V
Notes:
1. See Pulse Wave Form.
2. See Peak Pulse Power vs. Pulse Time.
3. Only applies to unidirectional devices.
4. Part numbers with a “C” suffi x are bidirectional devices, i.e. CDNBS08-T03C.
Thermal Characteristics (@ T
A
= 25 °C Unless Otherwise Noted)
Parameter Symbol Max. Unit
Operating Temperature T
J
-55 to +150 °C
Storage Temperature T
STG
-55 to +150 °C
