2004 Nov 05 3
Philips Semiconductors Product specification
NPN Darlington transistors BC875; BC879
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BC875 − 60 V
BC879 − 100 V
V
CES
collector-emitter voltage V
BE
=0 V
BC875 − 45 V
BC879 − 80 V
V
EBO
emitter-base voltage open collector − 5V
I
C
collector current (DC) − 1A
I
CM
peak collector current − 2A
I
B
base current (DC) − 0.2 A
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 0.83 W
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
thermal resistance from junction to ambient note 1 150 K/W
