DMP1245UFCL-7 Datasheet DMP1245UFCL-7 | P1-P3

DMP1245UFCL

Document number: DS35505 Rev. 2 - 2

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www.diodes.com

March 2015

DMP1245UFCL

ADVANCE INFO R MA T I O N

12V P-CHANNEL ENHANCEMENT MODE MOSFET

Summary

(BR)DSS

DS(on)

max

-12V

29mΩ @V

= -4.5V

-6.6 A

45mΩ @V

= -2.5V

-5.3 A

60mΩ @V

= -1.8V

-4.6 A

100mΩ @V

= -1.5V

-3.5 A

Applications

This device provides high performance, low R

DS(ON)

P Channel

MOSFETs in the thermally and space efficient X1-DFN1616-6

package. The low R

DS(ON)

of this MOSFET ensures conduction

losses are kept making it ideal for use as a:

 Battery Disconnect Switch

 Load Switch for Power Management Functions

Features and Benefits

 Typical off board profile of 0.5mm ideally suited for thin

applications

 Low R

DS(ON)

minimizes conduction

losses

 PCB footprint of 2.56mm

 3kV ESD Protected Gate – protection against human borne

ESD

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

 Case: X1-DFN1616-6

 Case Material: Molded Plastic, “Green” Molding Compound;

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Lead Free Plating (NiPdAu Finish over Copper Leadframe)

 Terminals: Solderable per MIL-STD-202, Method 208

 Weight: 0.04 grams (Approximate)

Ordering Information (Note 4)

Product

Marking

Reel size (inches)

Tape width (mm)

Quantity per reel

DMP1245UFCL-7

3,000

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year

2011

….

2014

2015

2016

2017

2018

2019

2020

2021

Code

….

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

X1-DFN1616-6

Device symbol

Bottom View

Top View

Pin-Out

Pin 1

P5 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: Y = 2011)

M = Month (ex: 9 = September)

Gate Protection

Diode

X1-DFN1616-6

DMP1245UFCL

Document number: DS35505 Rev. 2 - 2

2 of 7

www.diodes.com

March 2015

DMP1245UFCL

ADVANCE INFO R MA T I O N

Maximum Ratings (@T

= +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Units

Drain-Source Voltage

DSS

-12

Gate-Source Voltage

GSS

±8

Continuous Drain Current (Note 6) @T

= +25°C

= +70°C

-6.6

-5.25

Pulsed Drain Current T

= 10µs

-16.67

Thermal Characteristics (@T

= +25°C unless otherwise specified.)

Characteristic

Symbol

Value

Units

Total Power Dissipation

(Note 5)

613

(Note 6)

1.7

Thermal Resistance, Junction to Ambient

(Note 5)



204

°C/W

(Note 6)

Operating and Storage Temperature Range

STG

-55 to +150

°C

Notes: 5. For a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state

condition.

6. For a device surface mounted on 25mm by 25mm by 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device

is measured when operating in a steady state condition.

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000

t1, PULSE DURATION TIMES (sec)

Fig. 03 Transient Thermal Resistance

R (t)=r(t) * R

JA JA

R = 205°C/W

Duty Cycle, D=t1/ t2

JA

r(t), TRANSIENT THERMAL RESISTANCE

100

0.0001 0.001 0.01 0.1 1 10 100 1000

t , PULSE DURATION TIME (sec)

Fig. 1 Single Pulse Maximum Power Dissipation

P(pk), PEAK TRANSIENT POWER (W)

Single Pulse

R =205°C/W

R (t)=R *r(t)

T -T =P*R (t)







JA JA

J A JA

0.1 1 10 100

-V , DRAIN-SOURCE VOLTAGE (V)

Fig. 2 SOA, Safe Operation Area

I , DRAIN CURRENT (A)

0.1

100

(

)

(

)

0.01

I (A) @P =10s

I (A) @ DC

I (A) @P =1s

I (A) @P =100ms

I (A) @P =10ms

I (A) @

P =10µs

T = 150 C

T = 25 C

Single Pulse

J(MAX)



Limited

DS(ON)

DMP1245UFCL

Document number: DS35505 Rev. 2 - 2

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March 2015

DMP1245UFCL

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Electrical Characteristics (@T

= +25°C unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

DSS

-12



= 0V, I

= -250µA

Zero Gate Voltage Drain Current T

= +25°C

DSS



-1

µA

= -12.0V, V

= 0V

Gate-Source Leakage

GSS



10

µA

= 8.0V, V

= 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

GS(th)

-0.3

-0.6

-0.95

= V

, I

= -250µA

Static Drain-Source On-Resistance

DS (ON)



mΩ

= -4.5V, I

= - 4A



= -2.5V, I

= - 3.5A



= -1.8V, I

= - 1A



100

= -1.5 V, I

= - 0.5A

Forward Transfer Admittance

0.4

= -5V, I

= -2A

Diode Forward Voltage

-1.0

= 0V, I

= -2A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

iss

1357.4

= -10V, V

= 0V

f = 1.0MHz

Output Capacitance

oss

499

Reverse Transfer Capacitance

rss

273.6

Gate Resistance

14.26

Ω

= 0V, V

= 0V, f = 1MHz

Total Gate Charge

16.1

= -4.5V

= -1A,

= -10V

26.1

= -8V

Gate-Source Charge

1.71

Gate-Drain Charge

20.48

Turn-On Delay Time

D(on)

15.2

= -2.5V, V

= -10V

= -180mA, R

= 2.0Ω,

Turn-On Rise Time

33.11

Turn-Off Delay Time

D(off)

219.4

Turn-Off Fall Time

217.64

Notes: 7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.

P1-P3 P4-P6 P7-P7

DMP1245UFCL-7

Mfr. #:

Buy DMP1245UFCL-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET 12V P-CH ENH MOSFET LOW RDSon High PERF

Lifecycle:

New from this manufacturer.

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