OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SP8K31TB1

P1-P3P4-P5
SP8K31
Transistor
1/4
4V Drive
Nch+Nch
MOSFET
SP8K31
zStructure
Silicon N-channel
MOSFET
zFeatures
1) Built-in G-S Protection Diode.
2) Small surface Mount Package (SOP8).
zApplications
Switching
zPackaging dimensions
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2.>
∗1
∗1
∗2
Parameter
VV
DSS
Symbol
VV
GSS
AI
D
AI
DP
AI
S
AI
SP
WP
D
°CTch
°CTstg
Unit
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Source current
(Body diode)
Pulsed
∗1 Pw 10µs, Duty cycle 1%
∗2 Mounted on a ceramic board.
60
±20
±3.5
±14
1.0
14
2.0
150
−55 to +150
Limits
Each lead has same dimensions
SOP8
Package
Code
Taping
Basic ordering unit (pieces)
SP8K31
TB
2500
Type
zDimensions
(
Unit : mm
)
zE
q
uivalent circuit
(1) Tr1 Source
(2) Tr1 Gate
(3) Tr2 Source
(4) Tr2 Gate
(5) Tr2 Drain
(6) Tr2 Drain
(7) Tr1 Drain
(8) Tr1 Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) (2) (3) (4)
(8) (7) (6) (5)
∗2
∗1
∗2
∗1
(8) (7)
(1) (2)
(6) (5)
(3) (4)
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
SP8K31
Transistor
2/4
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Parameter Symbol
I
GSS
Y
fs
Min.
−
Typ. Max.
Unit
Conditions
V
(BR) DSS
I
DSS
V
GS (th)
R
DS (on)
C
iss
C
oss
C
rss
t
d (on)
tr
t
d (off)
t
f
Q
g
Q
gs
Q
gd
∗
∗
∗
∗
∗
∗
∗
∗
∗
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗Pulsed
−±10 µAV
GS
=±20V, V
DS
=0V
V
DD
30V, V
GS
= 5V
60 −−VI
D
= 1mA, V
GS
=0V
−−1 µAV
DS
= 60V, V
GS
=0V
1.0 − 2.5 V V
DS
= 10V, I
D
= 1mA
− 85 120 I
D
= 3.5A, V
GS
= 10V
− 100 140 mΩ
mΩ
mΩ
I
D
= 3.5A, V
GS
= 4.5V
− 105 150 I
D
= 3.5A, V
GS
= 4.0V
2.5 −−SV
DS
= 10V, I
D
= 3.5A
− 250 − pF V
DS
= 10V
− 60
30
− pF V
GS
=0V
−
7
− pF f=1MHz
−
14
− ns
−
25
− ns
−
7
− ns
−
3.7
− ns
−
1.2
5.2 nC
−
1.2
− nC I
D
= 3.5A
−−nC R
L
= 8.6Ω, R
G
= 10Ω
VDD 30V
ID= 1.8A
V
GS= 10V
R
L= 17Ω
R
G=10Ω
zBody diode characteristics (Source-drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2.>
Forward voltage
V
SD
−−1.2 V I
S
=3.5A, V
GS
=0V
Parameter Symbol
Min. Typ. Max.
Unit
Conditions
∗Pulsed
∗
SP8K31
Transistor
3/4
zElectrical characteristic curves
0.5 1.0 1.5 2.0 2.5 3.0
0.001
0.01
0.1
1
100
10
GATE-SOURCE VOLTAGE : V
GS
(V)
DRAIN CURRENT : I
D
(A)
Fig.1
Typical Transfer Characteristics
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
DS
=10V
Pulsed
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current(Ι)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
V
GS
=10V
Pulsed
V
GS
=4.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙ)
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
V
GS
=4V
Pulsed
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙΙ )
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
Ta=25°C
Pulsed
Fig.5 Static Drain-Source
On-State Resistance
vs. Drain Current( )
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
V
GS
=10V
V
GS
=4.5V
V
GS
=4.0V
0 5 10 15
GATE-SOURCE VOLTAGE : V
GS
(V)
0
100
200
300
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.6 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
I
D
=3.5A
I
D
=1.75A
0.01
0.1
1
10
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
SOURCE CURRENT : I
S
(A)
Fig.7 Source Current vs.
Source-Drain Voltage
V
GS
=0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
100
1000
10
0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
V
GS
=0V
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
SWITCHING TIME : t (ns)
1000
100
Ta=25°C
V
DD
=30V
V
GS
=10V
R
G
=10Ω
Pulsed
Fig.9 Switching Characteristics
t
r
t
f
t
d (off)
t
d (on)
P1-P3P4-P5

SP8K31TB1

Mfr. #:
Buy SP8K31TB1
Manufacturer:
Description:
MOSFET MOSFET 30V 3.5A NCH DUAL
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet