MBR1090-M3, MBR10100-M3
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
1
Document Number: 89193
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
MECHANICAL DATA
Case: TO-220AC
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
I
F(AV)
10 A
V
RRM
90 V, 100 V
I
FSM
150 A
V
F
0.65 V
T
J
max. 150 °C
Package TO-220AC
Diode variations Single die
CASE
PIN 2
PIN 1
MAXIMUM RATINGS (T
C
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090 MBR10100 UNIT
Maximum repetitive peak reverse voltage V
RRM
90 100 V
Working peak reverse voltage V
RWM
90 100 V
Maximum DC blocking voltage V
DC
90 100 V
Maximum average forward rectified current at T
C
= 133 °C I
F(AV)
10 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
150 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-65 to +150 °C
ELECTRICAL CHARACTERISTICS (T
C
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT
Maximum instantaneous forward voltage
I
F
= 10 A
T
C
= 25 °C
V
F
(1)
0.80
V
T
C
= 125 °C
0.65
I
F
= 20 A 0.75
Maximum reverse current per diode
at working peak reverse voltage
T
J
= 25 °C
I
R
(2)
100 μA
T
J
= 100 °C 6.0 mA
