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TK1K9A60F,S4X

P1-P3P4-P6P7-P9P10-P10
TK1K9A60F
1
MOSFETs Silicon N-Channel MOS (π-MOS)
TK1K9A60F
TK1K9A60F
TK1K9A60F
TK1K9A60F
Start of commercial production
2018-01
1.
1.
1.
1. Applications
Applications
Applications
Applications
• Switching Power Supplies
2.
2.
2.
2. Features
Features
Features
Features
(1) Easy to control Gate switching
(2) Low drain-source on-resistance: R
DS(ON)
= 1.6 Ω (typ.)
(3) Enhancement mode: V
th
= 2.0 to 4.0 V (V
DS
= 10 V, I
D
= 0.4 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
TO-220SIS
1: Gate
2: Drain
3: Source
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Single-pulse avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(T
c
= 25 )
(t = 1.0 s)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
E
AS
I
AS
I
DR
I
DRP
T
ch
T
stg
V
ISO(RMS)
TOR
Rating
600
±30
3.7
14.8
30
101
3.7
3.7
14.8
150
-55 to 150
2000
0.6
Unit
V
A
W
mJ
A
V
Nm
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2017-11-28
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
TK1K9A60F
2
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Symbol
R
th(ch-c)
R
th(ch-a)
Max
4.16
62.5
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: V
DD
= 90 V, T
ch
= 25 (initial), L = 12.9 mH, I
AS
= 3.7 A
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2017-11-28
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
TK1K9A60F
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
th
R
DS(ON)
Test Condition
V
GS
= ±30 V, V
DS
= 0 V
V
DS
= 600 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
V
DS
= 10 V, I
D
= 0.4 mA
V
GS
= 10 V, I
D
= 1.9 A
Min
600
2.0
Typ.
1.6
Max
±1
10
4.0
1.9
Unit
µA
V
Ω
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
MOSFET dv/dt ruggedness
Symbol
C
iss
C
rss
C
oss
r
g
t
r
t
on
t
f
t
off
dv/dt
Test Condition
V
DS
= 300 V, V
GS
= 0 V, f = 100 kHz
V
DS
= OPEN , f = 1 MHz
See Figure 6.2.1
V
DS
≤ V
(BR)DSS
, I
D
≤ 1.9 A
Min
12
Typ.
490
5.2
20
7
15
32
15
50
Max
Unit
pF
Ω
ns
V/ns
V
DD
≈ 400 V
V
GS
= 10 V/0 V
I
D
= 1.9 A
R
L
= 210 Ω
R
G
= 10 Ω
Duty ≤ 1 %, t
w
= 10 µs
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 3.7 A
Min
Typ.
14
3
5.9
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Diode dv/dt ruggedness
Symbol
V
DSF
t
rr
Q
rr
I
rr
dv/dt
Test Condition
I
DR
= 3.7 A, V
GS
= 0 V
V
DD
≈ 400 V,
I
DR
= 3.7 A, V
GS
= 0 V
-dI
DR
/dt = 100 A/µs
V
DD
≤ 400 V, I
DR
≤ 3.7 A, V
GS
= 0 V
Min
5
Typ.
600
3.0
10
Max
-1.7
Unit
V
ns
µC
A
V/ns
2017-11-28
Rev.2.0
©2017
Toshiba Electronic Devices & Storage Corporation
P1-P3P4-P6P7-P9P10-P10

TK1K9A60F,S4X

Mfr. #:
Buy TK1K9A60F,S4X
Manufacturer:
Toshiba
Description:
MOSFET N-Ch TT-MOSIX 600V 30W 490pF 3.7A
Lifecycle:
New from this manufacturer.
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