ITA6V5B1RL

November 2007 Rev 2 1/7
7
ITAxxB1
Bidirectional Transil™ array for data line protection
Features
High surge capability Transil array:
I
PP
= 40 A (8/20 µs)
Peak pulse power: 300 W (8/20 µs)
Up to 5 bidirectional Transil functions
Low clamping factor (V
CL
/ V
BR
) at high current
level
Low leakage current
ESD protection up to 15 kV
Complies with the following standards
IEC 61000-4-2 level 4
15 kV (air discharge)
8 kV (contact discharge)
MIL STD 883G- Method 3015-7: class 3B
25 kV (human body model)
Applications
Differential data transmission line protection, such
as:
RS-232
RS-423
RS-422
RS-485
Description
Transil diode arrays provide high overvoltage
protection by clamping action. Their
instantaneous response to transient overvoltages
makes them particularly suited to protect voltage
sensitive devices such as MOS technology and
low voltage supplied IC’s.
The ITA series combines high surge capability
against energetic pulses with high voltage
performance against ESD.
TM: Transil is a trademark of STMicroelectronics
Figure 1. Functional diagram
SO-8
1
2
3
4
I/O1
I/O2
I/O3
I/O4
GND
GND
8
7
6
5
www.st.com
Characteristics ITAxxB1
2/7
1 Characteristics
Table 1. Absolute ratings (T
amb
= 25 °C)
Symbol Parameter Value Unit
P
PP
Peak pulse power (8/20 µs)
(1)
T
j
initial = T
amb
300 W
I
PP
Peak pulse current (8/20 µs)
(1)
T
j
initial = T
amb
40 A
I
2
tWire I
2
t value
(1)
0.6 A
2
s
T
j
Maximum operating junction temperature 125 °C
T
stg
Storage temperature range -55 to +150 °C
T
L
Maximum lead temperature for soldering during 10 s at 5 mm for case 260 °C
1. For surges greater than the specified maximum value, the I/O will first present a short-circuit and after an open circuit
caused by the wire melting.
Table 2. Electrical characteristics (T
amb
= 25 °C)
Symbol Parameter
V
RM
Stand-off voltage
V
BR
Breakdown voltage
V
CL
Clamping voltage
I
RM
Leakage current
I
PP
Peak pulse current
αT Voltage temperature coefficient
C Capacitance
Order code
V
BR
@ I
R
I
RM
@ V
RM
V
CL
@ I
PP
V
CL
@ I
PP
αTC
min.
max.
8/20 µs max. 8/20 µs max. max.
(1) (1) (1) (2)
VmAµAVVAVA10
-4
/ °C pF
ITA6V5B1 6.5 1 10 5 10101225 4750
ITA10B1 10 1 4 8 15 10 19 25 8 570
ITA18B1 18 1 4 1525102825 9350
ITA25B1 25 1 4 243310382512300
1. Betwenn I/O pin and ground.
2. Between two input pins at 0 V Bias, F = 1 MHz.
VBR
VCLVRM
IRM
IPP
I
V
ITAxxB1 Characteristics
3/7
Figure 2. Pulse waveform Figure 3. Typical peak pulse power versus
exponential pulse duration
%I
PP
t
8 µs
100
50
0
20 µs
Pulse waveform 8/20 µs
P
PP
(W)
1E-03 1E-02 1E-01 1E+00 1E+01 1E+02
1E+01
1E+02
1E+03
1E+04
T
j
initial=25°C
t
P
(ms) expo
ITA18B1
ITA25B1
ITA6V5B1 ITA10B1
Figure 4. Clamping voltage versus peak
pulse current (exponential
waveform 8/20 µs)
Figure 5. Peak current I
DC
inducing open
circuit of the wire for one
input/output versus pulse duration
(typical values)
V
CL
(V)
T
j
initial=25°C
I
PP
(A)
1E+00
1E+01
1E+02
1E+03
1E-01 1E+00 1E+01 1E+02
ITA18B1
ITA25B1
ITA6V5B1
ITA10B1
%I
PP
t
r
100
50
0
t
p
t
I
DC
(A)
t
P
(ms)
1E+00
1E+01
1E+02
1E+03
1E-02 1E-01 1E+00 1E+01
Exponential waveform
Figure 6. Junction capacitance versus
reverse applied voltage for one
input/output (typical values)
Figure 7. Relative variation of leakage
current versus junction
temperature
C(pF)
T
j
=25°C
F=1MHz
V
R
(V)
1E+02
1E+03
1E+00 1E+01 1E+02
ITA18B1
ITA25B1
ITA6V5B1
ITA10B1
5E+3
1E+3
1E+2
1E+1
0 25 50 75 100 125 150
1E+0
1E-1
T
j
(°C)
I
R
(T )
I (T =25°C)
j
Rj
V
R
=V
RM

ITA6V5B1RL

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
TVS Diodes / ESD Suppressors 6.5V 300W Bidirect
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet