APTGL40H120T1G Datasheet APTGL40H120T1G | P1-P3

APTGL40H120T1G

APTGL40H120T1G – Rev 1 October, 2012

www.microsemi.com

1-6

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1200 V

T

C

= 25°C

65

I

C

Continuous Collector Current

T

C

= 80°C

40

I

CM

Pulsed Collector Current T

C

= 25°C 70

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

220 W

RBSOA Reverse Bias Safe Operating Area T

j

= 150°C 70A @ 1100V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

See application note

APT0502 on www.microsemi.com

Q3

Q4

1

2

9

Q2

Q1

6

4

11

8

10

12

CR2

CR1

3

7

5

NTC

CR4

CR3

Pins 3/4 must be shorted together

V

CES

= 1200V

I

C

= 40A @ Tc = 80°C

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Trench + Field Stop IGBT 4 Technology

- Low voltage drop

- Low leakage current

- Low switching losses

- Low tail current

- Soft recovery parallel diodes

- Low diode VF

- RBSOA and SCSOA rated

 Kelvin emitter for easy drive

 Very low stray inductance

 High level of integration

 Internal thermistor for temperature monitoring

Benefits

 Outstanding performance at high frequency

operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal

for easy PCB mounting

 Low profile

 RoHS compliant

Full bridge

Trench + Field Stop IGBT4

Power Module

APTGL40H120T1G

APTGL40H120T1G – Rev 1 October, 2012

www.microsemi.com

2-6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1200V 250 µA

T

j

= 25°C 1.85 2.25

V

CE(sat)

Collector Emitter saturation Voltage

V

GE

= 15V

I

C

= 35A

T

j

= 150°C 2.25

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 1.2mA 5.0 5.8 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 1950

C

oes

Output Capacitance 155

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

115

pF

Q

G

Gate charge

V

GE

= ±15V ; V

CE

=600V

I

C

=35A

0.27 µC

T

d(on)

Turn-on Delay Time 130

T

r

Rise Time 20

T

d(off)

Turn-off Delay Time 300

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

CE

= 600V

I

C

= 35A

R

G

= 12

45

ns

T

d(on)

Turn-on Delay Time 150

T

r

Rise Time 35

T

d(off)

Turn-off Delay Time 350

T

f

Fall Time

Inductive Switching (150°C)

V

GE

= ±15V

V

CE

= 600V

I

C

= 35A

R

G

= 12

80

ns

T

J

= 25°C 2.6

E

on

Turn-on Switching Energy

T

J

= 150°C 4

mJ

T

J

= 25°C 2

E

off

Turn-off Switching Energy

V

GE

= ±15V

V

CE

= 600V

I

C

= 35A

R

G

= 12

T

J

= 150°C 3

mJ

I

sc

Short Circuit data

V

GE

≤15V ; V

Bus

= 900V

t

p

≤10µs ; T

j

= 150°C

140 A

Reverse diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1200 V

T

j

= 25°C 100

I

RM

Maximum Reverse Leakage Current V

R

=1200V

T

j

= 150°C 500

µA

I

F

DC Forward Current

Tc = 80°C 30 A

I

F

= 30A 2.6 3.1

I

F

= 60A 3.2

V

F

Diode Forward Voltage

I

F

= 30A T

j

= 125°C 1.8

V

T

j

= 25°C 300

t

rr

Reverse Recovery Time

T

j

= 125°C 380

ns

T

j

= 25°C 360

Q

rr

Reverse Recovery Charge

I

F

= 30A

V

R

= 800V

di/dt =200A/µs

T

j

= 125°C 1700

nC

APTGL40H120T1G

APTGL40H120T1G – Rev 1 October, 2012

www.microsemi.com

3-6

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

∆R

25

/R

25

5

%

B

25/85

T

25

= 298.15 K 3952

K

∆B/B T

C

=100°C 4

%





























TT

B

R

T

11

exp

25

85/25

25

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT

0.68

R

thJC

Junction to Case Thermal Resistance

Diode 1.2

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 175

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 80 g

SP1 Package outline (dimensions in mm)

See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGL40H120T1G

APTGL40H120T1G

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