AUIRFB/S/SL8409
www.irf.com © 2013 International Rectifier April 30, 2013
2
Notes:
Calculated continuous current based on maximum allowable
junction temperature. Bond wire current limit is 195A. Note that
current limitations arising from heating of the device leads may
occur with some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.15mH, R
G
= 50Ω,
I
AS
= 100A, V
GS
=10V. Part not recommended for use above
this value.
I
SD
≤ 100A, di/dt ≤ 990A/µs, V
DD
≤ V
(BR)DSS
, T
J
≤ 175°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques
refer to application note #AN-994.
R
θ
is measured at T
J
approximately 90°C.
R
θJC
value shown is at time zero.
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
V
BR
DSS
Drain-to-Source Breakdown Voltage 40 ––– ––– V
∆V
BR
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C
R
DS(on)
SMD ––– 0.97 1.2
R
DS(on)
TO-220 ––– 1.0 1.3
V
GS
th
Gate Threshold Voltage 2.2 ––– 3.9 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
R
G
Internal Gate Resistance ––– 2.1 ––– Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units
gfs Forward Transconductance 150 ––– ––– S
Q
Total Gate Charge ––– 300 450
Q
gs
Gate-to-Source Charge ––– 77 –––
Q
gd
Gate-to-Drain ("Miller") Charge ––– 98 –––
Q
sync
Total Gate Charge Sync. (Q
g
- Q
gd
) ––– 202 –––
t
d
on
Turn-On Delay Time ––– 32 –––
t
r
Rise Time ––– 105 –––
t
d(off)
Turn-Off Delay Time ––– 160 –––
t
f
Fall Time ––– 100 –––
C
iss
Input Capacitance ––– 14240 –––
C
oss
Output Capacitance ––– 2130 –––
C
rss
Reverse Transfer Capacitance ––– 1460 –––
C
oss
eff. (ER) Effective Output Capacitance (Energy Related) ––– 2605 –––
C
oss
eff. (TR) Effective Output Capacitance (Time Related) ––– 2920 –––
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage ––– 0.86 1.2 V
dv/dt Peak Diode Recovery
––– 2.7 ––– V/ns
t
rr
Reverse Recovery Time ––– 52 ––– T
J
= 25°C V
R
= 34V,
––– 52 ––– T
J
= 125°C I
F
= 100A
Q
rr
Reverse Recovery Charge ––– 97 ––– T
J
= 25°C
di/dt = 100A/µs
––– 97 ––– T
J
= 125°C
I
RRM
Reverse Recovery Current ––– 2.3 ––– A T
J
= 25°C
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
T
J
= 175°C, I
S
= 100A, V
DS
= 40V
V
DD
= 20V
I
D
= 100A, V
DS
=0V, V
GS
= 10V
T
J
= 25°C, I
S
= 100A, V
GS
= 0V
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 0V to 32V
MOSFET symbol
showing the
Conditions
V
GS
= 10V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 10V, I
D
= 100A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
DS
=20V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0 MHz
V
GS
= 0V, V
DS
= 0V to 32V
I
D
= 30A
R
G
= 2.7Ω
V
GS
= 10V
µA
nA
nC
ns
pF
Conditions
V
DS
= 10V, I
D
= 100A
I
D
= 100A
V
GS
= 20V
V
GS
= -20V
ns
nC
A
–––
–––
–––
–––
409
1576
Static Drain-to-Source On-Resistance mΩ
V
GS
= 10V, I
D
= 100A
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
θ
JC
Junction-to-Case ––– 0.40 °C/W
R
θ
CS
Case-to-Sink, Flat Greased Surface 0.50 –––
R
θ
JA
Junction-to-Ambient (PCB Mount) ––– 62
