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BUK7575-55A,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7575-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 4 February 201
1
6 of 13
NXP Semiconductors
BUK7575-55A
N-channel T
renchMOS st
andard level FET
Fig 5.
Output charac
teristics; drain curren
t as a
function of drain-source voltage; typica
l values
Fig 6.
Drain-source on
-state resistance as a function
of gate-source voltage; typical value
s
Fig 7.
Gate-source voltag
e as a function of gate
charge; typical values
Fig 8.
Sub-threshold
drain current as a function of
gate-source voltage
03nc09
0
10
20
30
40
50
60
0246
8
1
0
V
DS
(V)
I
D
(A)
4.5
5.5
6.5
7.5
8.5
20
14
9.5
12
10.5
V
GS
(V) = 16
03nc08
40
60
80
100
120
140
160
51
0
1
5
2
0
V
GS
(V)
R
DSon
(m
Ω
)
03nc05
0
2
4
6
8
10
0
5
10
15
Q
G
(nC)
V
GS
(V)
V
DD
= 44 V
V
DD
= 14 V
03aa35
V
GS
(V)
06
4
2
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
BUK7575-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 4 February 201
1
7 of 13
NXP Semiconductors
BUK7575-55A
N-channel T
renchMOS st
andard level FET
Fig 9.
Transfer characteristics: drain cu
rrent as a
function of gate-source voltag
e; typical values
Fig 10.
Reverse diode curre
nt as a function of reverse
diode voltage; typical valu
es
Fig 11.
Gate-source
threshold
voltage as a function o
f
junction temperature
Fig 12.
Drain-source on-state resistanc
e as a function
of drain current; typical values
03nc07
0
5
10
15
20
25
02468
1
0
V
GS
(V)
I
D
(A)
T
j
= 175
°
C
T
j
= 25
°
C
03nc04
0
20
40
60
80
100
120
0
0.5
1.0
1.5
2.0
V
SD
(V)
I
S
(A)
T
j
= 175
°
C
T
j
= 25
°
C
T
j
(
°
C)
−
60
180
120
06
0
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03nc10
40
60
80
100
120
140
160
180
0
1
02
03
04
0
5
0
I
D
(A)
R
DSon
(m
Ω
)
5.5
6
6.5
8
V
GS
(V) = 10
7
BUK7575-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2011. All rights reserved.
Product data sheet
Rev
. 02 — 4 February 201
1
8 of 13
NXP Semiconductors
BUK7575-55A
N-channel T
renchMOS st
andard level FET
Fig 13.
Normalized drain-source on-state resistance
factor as a
function of junction
temperature
Fig 14.
Input, output and reverse cap
acitances as a
function of drain
-source voltage; typical val
ues
T
j
(
°
C)
−
60
180
120
06
0
03aa28
1.2
0.6
1.8
2.4
a
0
03nc11
0
100
200
300
400
500
600
10
−
2
10
−
1
1
10
10
2
V
DS
(V)
C
(pF)
C
iss
C
oss
C
rss
P1-P3
P4-P6
P7-P9
P10-P12
P13-P14
BUK7575-55A,127
Mfr. #:
Buy BUK7575-55A,127
Manufacturer:
Nexperia
Description:
RF Bipolar Transistors MOSFET RAIL PWR-MOS
Lifecycle:
New from this manufacturer.
Delivery:
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