OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

HMC-ALH376

P1-P3P4-P6
LOW NOISE AMPLIFIERS - CHIP
1
1 - 168
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
v02.0209
General Description
Features
Functional Diagram
Noise Figure: 2 dB
Gain: 16 dB @ 40 GHz
P1dB Output Power: +6 dBm
Supply Voltage: +4V @ 87 mA
Die Size: 2.7 x 1.44 x 0.1 mm
Electrical Speci cations*, T
A
= +25° C, Vdd= +4V
Typical Applications
This HMC-ALH376 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment & Sensors
• Military & Space
The HMC-ALH376 is a GaAs MMIC HEMT three
stages, self-biased Low Noise Ampli er die
which operates between 35 and 45 GHz. The
ampli er provides 16 dB of gain, a 2 dB noise
gure and +6 dBm of output power at 1 dB gain
compression while requiring only 87 mA from a single
+4V supply. This self-biased LNA is ideal for integ-
ration into hybrid assemblies or Multi-Chip-Modules
(MCMs) due to its small size (3.9 mm).
HMC-ALH376
Parameter Min. Typ. Max. Min. Typ. Max. Units
Frequency Range 35 - 40 40 - 45 GHz
Gain 15 16 10 12 dB
Noise Figure 2 3 2.2 3 dB
Input Return Loss 10 17 dB
Output Return Loss 16 18 dB
Output Power for 1 dB Compression 6 6 dBm
Supply Current (Idd) (Vdd= +4V) 87 87 mA
*Unless otherwise indicated, all measurements are from probed die
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 169
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH376
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
Noise Figure vs. Frequency
Output Return Loss vs. Frequency
Linear Gain vs. Frequency
Input Return Loss vs. Frequency
-30
-25
-20
-15
-10
-5
0
35 37 39 41 43 45
RETURN LOSS (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
35 37 39 41 43 45
NOISE FIGURE (dB)
FREQUENCY (GHz)
-30
-25
-20
-15
-10
-5
0
35 37 39 41 43 45
RETURN LOSS (dB)
FREQUENCY (GHz)
0
5
10
15
20
25
35 37 39 41 43 45
GAIN (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
LOW NOISE AMPLIFIERS - CHIP
1
1 - 170
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC-ALH376
v02.0209
GaAs HEMT MMIC LOW NOISE
AMPLIFIER, 35 - 45 GHz
Outline Drawing
Absolute Maximum Ratings
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. TYPICAL BOND PAD IS .004” SQUARE.
3. BACKSIDE METALLIZATION: GOLD.
4. BACKSIDE METAL IS GROUND.
5. BOND PAD METALLIZATION: GOLD.
6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
7. OVERALL DIE SIZE
±
.002”
Drain Bias Voltage +5.5 Vdc
RF Input Power (35 - 40 GHz) -5 dBm
RF Input Power (40 - 45 GHz) -1 dBm
Channel Temperature 180 °C
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
Die Packaging Information
[1]
Standard Alternate
GP-2 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
P1-P3P4-P6

HMC-ALH376

Mfr. #:
Buy HMC-ALH376
Manufacturer:
Analog Devices Inc.
Description:
RF Amplifier GaAs HEMT WBand lo Noise amp, 35-45 GHz
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet