NVMFS5833NT1G Datasheet NVMFS5833NT3G, NVMFS5833NT1G, NVMFS5833NWFT3G | P1-P3

September, 2014 − Rev. 1

1 Publication Order Number:

NVMFS5833N/D

NVMFS5833N

Power MOSFET

40 V, 7.5 mW, 86 A, Single N−Channel,

SO−8FL

Features

• Low R

DS(on)

• Low Capacitance

• Optimized Gate Charge

• AEC−Q101 Qualified and PPAP Capable

• NVMFS5833NWF − Wettable Franks Option for Enhanced Optical

Inspection

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Value Unit

Drain−to−Source Voltage V

DSS

40 V

Gate−to−Source Voltage V

GS

"20 V

Continuous Drain Cur

-

rent R

Y

J−mb

(Notes 1, 2, 3 & 4)

Steady

State

T

mb

= 25°C

I

D

86

A

T

mb

= 100°C 61

Power Dissipation

R

Y

J−mb

(Notes 1, 2, 3

)

T

mb

= 25°C

P

D

112

W

T

mb

= 100°C 56

Continuous Drain Cur

-

rent R

q

JA

(Notes 1, 3 & 4)

Steady

State

T

A

= 25°C

I

D

16

A

T

A

= 100°C 11

Power Dissipation

R

q

JA

(Notes 1 & 3)

T

A

= 25°C

P

D

3.7

W

T

A

= 100°C 1.8

Pulsed Drain Current

T

A

= 25°C, t

p

= 10 ms

I

DM

324 A

Operating Junction and Storage Temperature T

J

, T

stg

−55 to

175

°C

Source Current (Body Diode) I

S

86 A

Single Pulse Drain−to−Source Avalanche

Energy (T

J

= 25°C, I

L(pk)

= 36 A, L = 0.1 mH)

E

AS

65 mJ

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

T

L

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Mounting Board (top) − Steady

State (Notes 2, 3)

R

Y

J−mb

1.3

°C/W

Junction−to−Ambient − Steady State (Note 3)

R

q

JA

41

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Psi (Y) is used as required per JESD51−12 for packages in which

substantially less than 100% of the heat flows to single case surface.

3. Surface−mounted on FR4 board using a 650 mm

2

, 2 oz. Cu pad.

4. Continuous DC current rating. Maximum current for pulses as long as

1 second are higher but are dependent on pulse duration and duty cycle/

SO−8 FLAT LEAD

CASE 488AA

STYLE 1

MARKING DIAGRAM

http://onsemi.com

5833 = Specific Device Code

xx = N (NVMFS5833N) or

= WF (NVMFS5833NWF)

A = Assembly Location

Y = Year

W = Work Week

ZZ = Lot Traceability

5833xx

AYWZZ

1

V

(BR)DSS

R

DS(ON)

MAX I

D

MAX

40 V

7.5 mW @ 10 V

86 A

G (4)

S (1,2,3)

N−CHANNEL MOSFET

D (5)

Device Package Shipping

†

ORDERING INFORMATION

NVMFS5833NT1G SO−8FL

(Pb−Free)

1500 /

Tape & Ree

l

NVMFS5833NT3G SO−8FL

(Pb−Free)

5000 /

Tape & Ree

l

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

s

Brochure, BRD8011/D.

S

G

D

NVMFS5833NWFT1G SO−8FL

(Pb−Free)

1500 /

Tape & Ree

l

NVMFS5833NWFT3G SO−8FL

(Pb−Free)

5000 /

Tape & Ree

l

NVMFS5833N

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Parameter

Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= 250 mA

40 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS

/T

J

32.6 mV/°C

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V,

V

DS

= 40 V

T

J

= 25°C 1.0 mA

T

J

= 125°C 100

Gate−to−Source Leakage Current I

GSS

V

DS

= 0 V, V

GS

= ±20 V ±100 nA

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

V

GS(TH)

V

GS

= V

DS

, I

D

= 250 mA

2.0 3.5 V

Threshold Temperature Coefficient V

GS(TH)

/T

J

−7.6 mV/°C

Drain−to−Source On Resistance R

DS(on)

V

GS

= 10 V, I

D

= 40 A 6.2 7.5

mW

Forward Transconductance g

FS

V

DS

= 5 V, I

D

= 5 A 38 S

CHARGES AND CAPACITANCES

Input Capacitance

C

iss

V

GS

= 0 V, f = 1.0 MHz, V

DS

= 25 V

1714

pF

Output Capacitance C

oss

210

Reverse Transfer Capacitance C

rss

144

Total Gate Charge Q

G(TOT)

V

GS

= 10 V, V

DS

= 32 V,

I

D

= 40 A

32.5

nC

Threshold Gate Charge Q

G(TH)

2.77

Gate−to−Source Charge Q

GS

7.37

Gate−to−Drain Charge Q

GD

9

SWITCHING CHARACTERISTICS (Note 6)

Turn−On Delay Time

t

d(on)

V

GS

= 10 V, V

DS

= 20 V,

I

D

= 40 A, R

G

= 2.5 W

10.23

ns

Rise Time t

r

19.5

Turn−Off Delay Time t

d(off)

23.60

Fall Time t

f

3.00

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

V

GS

= 0 V,

I

S

= 40 A

T

J

= 25°C 0.85 1.2

V

T

J

= 125°C 0.7

Reverse Recovery Time t

RR

V

GS

= 0 V, d

IS

/d

t

= 100 A/ms,

I

S

= 40 A

23.5

ns

Charge Time t

a

13.5

Discharge Time t

b

10

Reverse Recovery Charge Q

RR

14 nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: pulse width = 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

NVMFS5833N

http://onsemi.com

3

TYPICAL CHARACTERISTICS

0

10

20

30

40

50

60

70

80

90

110

0 0.5 1.0 1.5 2.0 3.0

Figure 1. On−Region Characteristics

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

10 V

V

GS

= 6 V

5.5 V

8 V

4.5 V

4.0 V

5.0 V

T

J

= 25°C

0

10

20

30

40

50

60

70

80

123 4 7

V

DS

= 3 V

T

J

= 25°C

T

J

= −55°C

T

J

= 125°C

Figure 2. Transfer Characteristics

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

5

7

9

11

19

21

23

456 8 10

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

V

GS

, GATE−TO−SOURCE VOLTAGE (V)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (mW)

I

D

= 40 A

T

J

= 25°C

6.0

6.2

6.3

6.4

10 20 30 40 50

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

I

D

, DRAIN CURRENT (A)

R

DS(on)

, DRAIN−TO−SOURCE RESISTANCE (mW)

T

J

= 25°C

V

GS

= 10 V

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

−50 −25 0 25 50 75 100 125 150 175

Figure 5. On−Resistance Variation with

Temperature

T

J

, JUNCTION TEMPERATURE (°C)

R

DS(on)

, DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

V

GS

= 10 V

I

D

= 40 A

10

1000

10000

100000

20 25 30

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

V

DS

, DRAIN−TO−SOURCE VOLTAGE (V)

I

DSS

, LEAKAGE (nA)

T

J

= 85°C

T

J

= 150°C

V

GS

= 0 V

100

2.5

56

90

100

110

79

17

15

13

6.1

15105

100

T

J

= 125°C

5.9

NVMFS5833NT1G

NVMFS5833NT1G

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