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6N1135-X009T

P1-P3P4-P6P7-P9P10-P10
6N1135, 6N1136
www.vishay.com
Vishay Semiconductors
End of Life January-2018 - Alternative Device: 6N135, 6N136
Rev. 1.9, 13-Nov-12
1
Document Number: 83909
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Speed Optocoupler, 1 MBd,
Photodiode with Transistor Output,
110 °C Rated
DESCRIPTION
The 6N1135 and 6N1136 are 110 °C rated optocouplers
with a GaAIAs infrared emitting diode, optically coupled with
an integrated photo detector which consists of a photo
diode and a high-speed transistor in a DIP-8 plastic
package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2 MHz. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
FEATURES
• Operating temperature from -55 °C to +110 °C
• Isolation test voltages: 5300 V
RMS
• TTL compatible
• High bit rates: 1 MBd
•Bandwidth 2 MHz
• Open-collector output
• External base wiring possible
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577 (pending)
• DIN EN 60747-5-5 (VDE 0884) (pending)
•cUL (pending)
• CQC (pending)
i179081_3
1
2
3
4
8
7
6
5
C (V
CC
)
NC
A
C
NC
B (V
B
)
C (V
O
)
E (GND)
V
DE
i179081
ORDERING INFORMATION
6N113#-X00#T
PART NUMBER PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
UL ≥ 7 ≥ 19
DIP-8 6N1135 6N1136
DIP-8, 400 mil, option 6 6N1135-X006 6N1136-X006
SMD-8, option 9 6N1135-X009T 6N1136-X009T
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5V
Forward current I
F
25 mA
Peak forward current t = 1 ms, duty cycle 50 % I
FM
50 mA
Maximum surge forward current t ≤ 1 μs, 300 pulses/s I
FSM
1A
Thermal resistance R
th
700 K/W
Power dissipation T
amb
= 70 °C P
diss
45 mW
OUTPUT
Supply voltage V
CC
-0.5 to 15 V
Output voltage V
O
-0.5 to 15 V
Emitter base voltage V
EBO
5V
Output current I
O
8mA
Maximum Output current 16 mA
> 0.1 mm
10.16 mm
7.62 mm
DIP-8
Option 6
Option 9
6N1135, 6N1136
www.vishay.com
Vishay Semiconductors
End of Life January-2018 - Alternative Device: 6N135, 6N136
Rev. 1.9, 13-Nov-12
2
Document Number: 83909
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Base current I
B
5mA
Thermal resistance 300 K/W
Power dissipation T
amb
= 70 °C P
diss
100 mW
COUPLER
Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, Nov. 74)
t = 1 min V
ISO
5300 V
RMS
Storage temperature range T
stg
-55 to +150 °C
Ambient temperature range T
amb
-55 to +100 °C
Soldering temperature
(1)
Max. ≤ 10 s, dip soldering
≥ 0.5 mm from case bottom
T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 1.6 mA V
F
-1.61.9V
Breakdown voltage I
R
= 10 μA V
BR
5--V
Reverse current V
R
= 5 V I
R
- 0.5 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
I
- 125 - pF
Temperature coefficient,
forward voltage
I
F
= 1.6 mA ΔV
F
/ΔT
A
-- 1.7-mV/°C
OUTPUT
Logic low supply current
I
F
= 1.6 mA, V
O
= open,
V
CC
= 15 V
I
CCL
- 150 - μA
Logic high supply current
I
F
= 0 mA, V
O
= open,
V
CC
= 15 V
I
CCH
-0.011 μA
Output voltage, output low
I
F
= 16 mA, V
CC
= 4.5 V,
I
O
= 1.1 mA,
6N1135 V
OL
-0.10.4V
I
F
= 16 mA, V
CC
= 4.5 V,
I
O
= 2.4 mA
6N1136 V
OL
-0.10.4V
Output current, output high
I
F
= 0 mA, V
O
= V
CC
= 5.5 V I
OH
- 3 500 nA
I
F
= 0 mA, V
O
= V
CC
= 15 V I
OH
-0.011 μA
COUPLER
Capacitance (input to output) f = 1 MHz C
IO
- 0.6- pF
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio
I
F
= 16 mA, V
O
= 0.4 V,
V
CC
= 4.5 V
6N1135 CTR 7 16 - %
6N1136 CTR 19 35 - %
I
F
= 16 mA, V
O
= 0.5 V,
V
CC
= 4.5 V
6N1135 CTR 5 - - %
6N1136 CTR 15 - - %
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
6N1135, 6N1136
www.vishay.com
Vishay Semiconductors
End of Life January-2018 - Alternative Device: 6N135, 6N136
Rev. 1.9, 13-Nov-12
3
Document Number: 83909
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Switching Times
Fig. 2 - Common-Mode Interference Immunity
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
High to low
I
F
= 16 mA, V
CC
= 5 V, R
L
= 4.1 kΩ 6N1135 t
PHL
-0.31.5μs
I
F
= 16 mA, V
CC
= 5 V, R
L
= 1.9 kΩ 6N1136 t
PHL
-0.20.8μs
Low to high
I
F
= 16 mA, V
CC
= 5 V, R
L
= 4.1 kΩ 6N1135 t
PLH
-0.31.5μs
I
F
= 16 mA, V
CC
= 5 V, R
L
= 1.9 kΩ 6N1136 t
PLH
-0.20.8μs
COMMON MODE TRANSIENT IMMUNITY
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
High
I
F
= 0 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 4.1 kΩ 6N1135 |CM
H
| - 1000 - V/μs
I
F
= 0 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 1.9 kΩ 6N1136 |CM
H
| - 1000 - V/μs
Low
I
F
= 16 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 4.1 kΩ 6N1135 |CM
L
| - 1000 - V/μs
I
F
= 16 mA, V
CM
= 10 V
P-P
, V
CC
= 5 V, R
L
= 1.9 kΩ 6N1136 |CM
L
| - 1000 - V/μs
i6n135_01
V
OL
t
t
5V
1.5 V
V
O
I
F
t
PLH
t
PHL
1
2
3
4
8
7
6
5
I
F
V
O
R
L
5V
Pulse generator
Z
O
= 50
Ω
t
r
,
t
f
= 5 ns
duty cycle 10 %
t ≤ 100 μs
C
L
15 pF
I
F
monitor
100
Ω
ı
i6n135_02
V
CM
V
O
V
O
10 V
5V
0V
V
OL
90 %
10 %
90 %
10 %
t
r
t
f
t
t
t
A: I
F
= 0 mA
B: I
F
= 16 mA
1
2
3
4
8
7
6
5
B
V
FF
I
F
+V
CM
V
O
R
L
5V
A
Pulse generator
Z
O
= 50 Ω
t
r
,
t
f
= 8 ns
P1-P3P4-P6P7-P9P10-P10

6N1135-X009T

Mfr. #:
Buy 6N1135-X009T
Manufacturer:
Vishay Semiconductors
Description:
High Speed Optocouplers 1Mbd High-Speed Trans Out CTR>5%
Lifecycle:
New from this manufacturer.
Delivery:
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