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2DD2661-13

P1-P3P4-P4
2DD2661
Document number: DS31635 Rev. 2 - 2
1 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2661
NEW PRODUCT
LOW V
CE(SAT)
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Complementary PNP Type Available (2DB1697)
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage
V
CBO
15 V
Collector-Emitter Voltage
V
CEO
12 V
Emitter-Base Voltage
V
EBO
6 V
Peak Pulse Current
I
CM
4 A
Continuous Collector Current
I
C
2 A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) @ T
A
= 25°C P
D
0.9 W
Thermal Resistance, Junction to Ambient Air (Note 3) @ T
A
= 25°C
R
θ
JA
139 °C/W
Power Dissipation (Note 4) @ T
A
= 25°C P
D
2 W
Thermal Resistance, Junction to Ambient Air (Note 4) @ T
A
= 25°C
R
θ
JA
62.5 °C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150 °C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Conditions
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
V
(
BR
)
CBO
15
⎯ ⎯
V
I
C
= 10μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 5)
V
(
BR
)
CEO
12
⎯ ⎯
V
I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage
V
(
BR
)
EBO
6
⎯ ⎯
V
I
E
= 10μA, I
C
= 0
Collector Cut-Off Current
I
CBO
⎯ ⎯
0.1
μA
V
CB
= 15V, I
E
= 0
Emitter Cut-Off Current
I
EBO
⎯ ⎯
0.1
μA
V
EB
= 6V, I
C
= 0
ON CHARACTERISTICS (Note 5)
Collector-Emitter Saturation Voltage
V
CE
(
SAT
)
⎯ ⎯
180 mV
I
C
= 1A, I
B
= 50mA
DC Current Gain
h
FE
270
⎯
680
⎯ V
CE
= 2V, I
C
= 200mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
26
⎯
pF
V
CB
= 10V, I
E
= 0,
f = 1MHz
Current Gain-Bandwidth Product
f
T
⎯
170
⎯
MHz
V
CE
= 2V, I
C
= 100mA,
f = 100MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Device mounted on FR-4 PCB with 1 inch
2
copper pad layout.
5. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Top View
Device Schematic
Pin Out Configuration
4
3
2
1
C
C
B
E
T
O
P
V
I
E
W
3
1
2,4
C
O
L
L
E
C
T
O
R
E
M
I
T
T
E
R
B
A
S
E
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2DD2661
Document number: DS31635 Rev. 2 - 2
2 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2661
NEW PRODUCT
0
0.4
0.8
25 50
75
100 125
150
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(W)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
A
1.2
1.6
2.0
0
0
0.5
1.0
1.5
2.0
2.5
04 8121620
V , COLLECTOR-EMITTER VOLTAGE (V)
CE
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
I = 1mA
B
I = 2mA
B
I = 3mA
B
I = 4mA
B
I = 5mA
B
10
100
1,000
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 3 Typical DC Current Gain vs. Collector Current
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.001
0.01
0.1
1
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAGE (V)
I/I = 20
CB
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 150°C
A
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
0.2
0.4
0.6
0.8
1.0
1.
2
V , BASE-EMI
E
N-
N V
L
A
E (V)
BE(ON)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
V = 2V
CE
0.2
0.4
0.6
0.8
1.0
1.2
1 10 100 1,000 10,000
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
T = 150°C
A
T = 25°C
A
T = -55°C
A
T = 85°C
A
I = 20
CB
/I
2DD2661
Document number: DS31635 Rev. 2 - 2
3 of 4
www.diodes.com
December 2008
© Diodes Incorporated
2DD2661
NEW PRODUCT
0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Fig. 7 Typical Capacitance Characteristics
10
100
1,000
A
A
I
A
E (p
)
C
ibo
C
obo
f = 1MHz
0102030405060 708090100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
1
10
100
1,000
f,
G
AIN-BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 2V
f = 100MHz
CE
Ordering Information (Note 6)
Part Number Case Packaging
2DD2661-13 SOT89-3L 2500/Tape & Reel
Notes: 6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Package Outline Dimensions
SOT89-3L
Dim Min Max Typ
A 1.40 1.60 1.50
B 0.45 0.55 0.50
B1 0.37 0.47 0.42
C 0.35 0.43 0.38
D 4.40 4.60 4.50
D1 1.50 1.70 1.60
E 2.40 2.60 2.50
e — — 1.50
H 3.95 4.25 4.10
L 0.90 1.20 1.05
All Dimensions in mm
2661 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 8 = 2008)
WW = Week code 01 - 52
e
D
H
L
A
C
E
8
°
(
4
X
)
B1
B
D1
R
0
.
2
0
0
2661
YWW
P1-P3P4-P4

2DD2661-13

Mfr. #:
Buy 2DD2661-13
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K
Lifecycle:
New from this manufacturer.
Delivery:
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