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IXGP12N120A3

P1-P3P4-P5
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
Fig. 11. Maximum Transient Thermal Impedance
0.01
0.10
1.00
10.00
0.00001 0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z
(th)JC
- ºC / W
Fig. 11. Maximum Transient Thermal Impedance
aaaaaa
3.00
Fig. 7. Transconductance
0
2
4
6
8
10
12
0 5 10 15 20 25 30 35 40
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 2 4 6 8 10121416182022
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 600V
I
C
= 12A
I
G
= 10mA
Fig. 9. Reverse-Bias Safe Operating Area
0
4
8
12
16
20
24
28
200 300 400 500 600 700 800 900 1000 1100 1200
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 10Ω
dv / dt < 10V / ns
Fig. 10. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
ies
C
oes
C
res
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_12N120A3(2M)02-11-10
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
100
120
140
160
180
200
220
240
6 8 10 12 14 16 18 20 22 24
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
800
900
1000
1100
1200
1300
1400
1500
1600
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
20
30
40
50
60
70
80
90
100
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 960V
I
C
= 12A
I
C
= 24A
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
600
800
1000
1200
1400
1600
1800
2000
2200
6 8 10 12 14 16 18 20 22 24
I
C
- Amperes
t
f
- Nanoseconds
30
40
50
60
70
80
90
100
110
t
d
(
off
)
- Nanoseconds
t
f
t
d(off
)
- - - -
R
G
= 10Ω, V
GE
= 15V
V
CE
= 960V
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
100
120
140
160
180
200
220
240
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 10Ω , V
GE
= 15V
V
CE
= 960V
I
C
= 12A
I
C
= 24A
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
1100
1200
1300
1400
1500
1600
1700
1800
0 30 60 90 120 150 180 210 240 270 300
R
G
- Ohms
t
f
- Nanoseconds
0
100
200
300
400
500
600
700
t
d
(
off
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 24A
I
C
= 12A
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
140
160
180
200
220
240
260
0 30 60 90 120 150 180 210 240 270 300
R
G
- Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
140
t
d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 960V
I
C
= 24A
I
C
= 12A
IXGA12N120A3 IXGP12N120A3
IXGH12N120A3
P1-P3P4-P5

IXGP12N120A3

Mfr. #:
Buy IXGP12N120A3
Manufacturer:
Littelfuse
Description:
IGBT Modules GenX3 1200V IGBTs
Lifecycle:
New from this manufacturer.
Delivery:
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