OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NRTST40H100CTG

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
May, 2016 − Rev. 0
1 Publication Order Number:
NRTST40H100CT/D
NRTST40H100CT
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• These are Pb−Free Devices
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
Mechanical Characteristics
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes: 260°C Maximum for
10 sec
TO−220AB
CASE 221A
STYLE 6
3
4
1
VERY LOW FORWARD VOLT-
AGE, SCHOTTKY BARRIER
RECTIFIERS 40 AMPERES,
100 VOLTS
1
3
2, 4
2
www.onsemi.com
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
AKA = Polarity Designator
G = Pb−Free Package
AYWW
TS40H100G
AKA
TO−220AB
NRTST40H100CT
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
100 V
Average Rectified Forward Current
(Rated V
R
, T
C
= 118°C) Per device
(Rated V
R
, T
C
= 131°C) Per diode
I
F(AV)
40
20
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave, 20 kHz, T
C
= 113°C) Per device
(Rated V
R
, Square Wave, 20 kHz, T
C
= 128°C) Per diode
I
FRM
80
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
250 A
Operating Junction Temperature T
J
−55 to +150 °C
Storage Temperature T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating Symbol NRTST40H100CTG Unit
Maximum Thermal Resistance per Device (Note 1)
Junction−to−Case
Junction−to−Ambient
R
q
JC
R
q
JA
1.0
69.3
°C/W
°C/W
1. Assumes 150 mm
2
1 oz. copper band pad, on a FR4 board.
ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted)
Rating
Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(I
F
= 10 A, T
J
= 25°C)
(I
F
= 20 A, T
J
= 25°C)
(I
F
= 10 A, T
J
= 125°C)
(I
F
= 20 A, T
J
= 125°C)
v
F
0.58
0.73
0.53
0.65
−
0.76
−
0.68
V
Maximum Instantaneous Reverse Current (Note 2)
(V
R
= 70 V, T
J
= 25°C)
(V
R
= 70 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
4
4
16
11
−
−
50
30
mA
mA
mA
mA
Diode Capacitance
(Rated dc Voltage, T
J
= 25°C, f = 1 MHz)
C
d
147 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%
ORDERING INFORMATION
Device Package Shipping
NRTST40H100CTG TO−220AB
(Pb−Free)
50 Units / Rail
NRTST40H100CT
www.onsemi.com
3
TYPICAL CHARACTERISTICS
0.1
1.0
10.0
100.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1
1.0
10.0
100.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V) V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
F
, INSTANTANEOUS FORWARD CURRENT
(A)
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
T
J
= 150°C
T
J
= 125°C
T
J
= 150°C
T
J
= 85°C
T
J
= 25°C
T
J
= −55°C
T
J
= −55°C
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
1.E+00
10 20 30 40 50 60 70 80 90 100
1.E−06
1.E−05
1.E−04
1.E−03
1.E−02
1.E−01
10 20 30 40 50 60 70 80 90 100
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
V
F
, INSTANTANEOUS REVERSE VOLTAGE (V)
V
F
, INSTANTANEOUS REVERSE VOLTAGE (V)
I
F
, INSTANTANEOUS REVERSE CURRENT (A)
T
J
= 25°C
T
J
= 85°C
T
J
= 125°C
T
J
= 150°C
T
J
= 125°C
T
J
= 150°C
T
J
= 85°C
T
J
= 25°C
I
F
, INSTANTANEOUS REVERSE CURRENT (A)
0 20 40 60 80 100 120 140
10
100
1,000
10,000
0.1 1 10 100
Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Leg
V
R
, REVERSE VOLTAGE (V) T
C
, CASE TEMPERATURE (°C)
C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
Square Wave
dc
R
q
JC
= 1.5°C/W
T
J
= 25°C
0
5
10
15
20
25
30
35
40
P1-P3P4-P5

NRTST40H100CTG

Mfr. #:
Buy NRTST40H100CTG
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 40A 100V TRENCH RECT
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet