VS-T40HFL, VS-T70HFL, VS-T85HFL Series
www.vishay.com
Vishay Semiconductors
Revision: 20-Dec-16
12
Document Number: 93184
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 44 - Frequency Characteristics
Fig. 45 - Maximum Forward Energy Power Loss Characteristics
Fig. 46 - Forward Voltage Drop Characteristics Fig. 47 - Forward Voltage Drop Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
50 Hz
400
1000
200
15002500
1000020000
5000
Peak Forward Current (A)
Pu lse Ba se w id t h ( µs)
tp
1E4
T85HFL.. Series
Sinusoida l Pulse
T = 90°C
C
1E1 1E2 1E3 1E4
50 Hz400
1000
200
1500
2500
5000
Pu l se Ba se w i d t h ( µ s)
tp
1E1
T85HFL.. Series
Trapezoidal Pulse
T = 90°C
C
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
0.01
0.02
0.04
0.1
0.2
0.4
1
2
4
10
20 joules per pulse
Pe a k Forw a rd C u rre n t ( A )
Pu l se Ba se w id t h ( µ s)
tp
1E4
T85HFL.. Series
Si n u so i d a l Pu l se
T = 125 °C
J
1E11E21E31E4
0.01
0.02
0.04
0.1
0.2
0.4
1
2
4
10
20 jo ules p e r pu lse
Pu l se Ba se w i d t h ( µ s)
tp
1E1
T8 5 H FL . . Se r i e s
Tra p ezo id al Pulse
T = 125°C
di/dt = 50A/µs
J
1
10
100
1000
0.5 1 1.5 2 2.5 3 3.5 4 4.5
T = 25°C
J
In st a n t a n e o u s Fo rw a rd C u rr e n t (A )
Instantaneous Forward Voltage (V)
T = 1 2 5 ° C
J
T4 0 H FL. . Se r i e s
1
10
100
1000
10000
01234567
T = 2 5 ° C
J
In st a n t a n e o u s Fo r wa rd C u rr e n t ( A )
Instantaneous Forward Voltage (V)
T7 0 HFL. . Se r i e s
T = 1 2 5 ° C
J
