July 2006 Rev 2 1/16
16
STB20NF06L - STF20NF06L
STP20NF06L
N-channel 60V - 0.06 - 20A - D
2
PAK/TO-220/TO-220FP
STripFET™ II Power MOSFET
General features
Avalanche rugged technology
100% avalanche tested
175°C operating temperature
High dv/dt capability
application oriented characterization
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “single feature size”™
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STB20NF06L 60V <0.07 20A
STF20NF06L 60V <0.07 20A
(1)
1. Refer to SOA for the max allowable current value on
FP-type due to Rth value
STP20NF06L 60V <0.07 20A
1
2
3
TO-220
1
3
1
2
3
TO-220FP
D²PAK
www.st.com
Order codes
Part number Marking Package Packaging
STB20NF06LT4 B20NF06L D²PAK Tape & reel
STF20NF06L F20NF06L TO-220FP Tube
STP20NF06L P20NF06L TO-220 Tube
Contents STB20NF06L - STF20NF06L - STP20NF06L
2/16
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packing mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
STB20NF06L - STF20NF06L - STP20NF06L Electrical ratings
3/16
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220/D²PAK TO-220FP
V
DS
Drain-source voltage (V
GS
= 0) 60 V
V
GS
Gate- source voltage ± 18 V
I
D
Drain current (continuous) at T
C
= 25°C 20 20
(1)
1. Refer to SOA for the max allowable current value on FP-type due to Rth value
A
I
D
Drain current (continuous) at T
C
= 100°C 14 14
(1)
A
I
DM
(2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 80 80
(1)
A
P
tot
Total dissipation at T
C
= 25°C 60 28 W
Derating Factor 0.4 0.18 W/°C
dv/dt
(3)
3. I
SD
20A, di/dt 200A/µs, V
DD
V
(BR)DSS
, Tj T
JMAX
Peak diode recovery voltage slope 9 V/ns
E
AS
(4)
4. Starting Tj = 25 °C, I
D
= 10A, V
DD
= 30V
Single pulse avalanche energy 120 mJ
T
stg
Storage temperature
-55 to 175 °C
T
j
Max. operating junction temperature
Table 2. Thermal data
Symbol Parameter TO-220/D²PAK TO-220FP Unit
Rthj-case Thermal resistance junction-case max 2.5 5.35 °C/W
Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W
T
l
Maximum lead temperature for soldering
purpose (for 10sec. 1.6mm from case)
300 °C/W

STF20NF06L

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET N-Ch, 60V-0.06ohms 20A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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