IXYH75N65C3 Datasheet IXYH75N65C3 | P1-P3

XPT

TM

650V IGBT

GenX3

TM

V

CES

= 650V

I

C110

= 75A

V

CE(sat)







2.3V

t

fi(typ)

= 60ns

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 650 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 650 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 175 A

I

LRMS

Terminal Current Limit 160 A

I

C110

T

C

= 110°C 75 A

I

CM

T

C

= 25°C, 1ms 360 A

I

A

T

C

= 25°C 30 A

E

AS

T

C

= 25°C 300 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 3 I

CM

= 150 A

(RBSOA) Clamped Inductive Load V

CE

 V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 8 μs

(SCSOA) R

G

= 82, Non Repetitive

P

C

T

C

= 25°C 750 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in

Weight 6g

DS100562C(4/15)

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 650 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.5 6.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 10 A

T

J

= 150C 500 A

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 60A, V

GE

= 15V, Note 1 1.8 2.3 V

T

J

= 150C 2.2 V

Features



International Standard Package



Optimized for 20-60kHz Switching



Square RBSOA



Avalanche Rated



Short Circuit Capability



High Current Handling Capability

Advantages



High Power Density



Low Gate Drive Requirement

Applications



Power Inverters



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Welding Machines



Lamp Ballasts

Extreme Light Punch through

IGBT for 20-60kHz Switching

IXYH75N65C3

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247AD

G

C

E

Tab

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH75N65C3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 25 44 S

C

ie

s

3410 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 190 pF

C

res

73 pF

Q

g(on)

122 nC

Q

ge

I

C

= 60A, V

GE

= 15V, V

CE

= 0.5 • V

CES

22 nC

Q

gc

60 nC

t

d(on)

26 ns

t

ri

65 ns

E

on

2.00 mJ

t

d(off)

93 ns

t

fi

60 ns

E

of

f

0.95 mJ

t

d(on)

26 ns

t

ri

64 ns

E

on

3.40 mJ

t

d(off)

115 ns

t

fi

64 ns

E

off

1.30 mJ

R

thJC

0.20 °C/W

R

thCS

0.21 °C/W

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Inductive load, T

J

= 150°C

I

C

= 60A, V

GE

= 15V

V

CE

= 400V, R

G

= 3

Note 2

Inductive load, T

J

= 25°C

I

C

= 60A, V

GE

= 15V

V

CE

= 400V, R

G

= 3

Note 2

1 - Gate

2,4 - Collector

3 - Emitter

TO-247 (IXYH) Outline

3

D

S

A

L

D

R

E

E1

L1

D1

D2

A2

Q

C

B

A

0P 0K M D B M

b4

0P1

1

2

4

b

c

e

IXYS OPTION

R1R1R1R1

J M C A M

b2

A1

IXYH75N65C3

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

30

60

90

120

150

01234

V

CE

(V)

I

C

(A)

V

GE

= 15V

14V

13V

12V

7V

8V

9V

11V

10V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

50

100

150

200

250

300

0 5 10 15 20

V

CE

(V)

I

C

(

A)

V

GE

= 15V

14V

12V

9V

8V

7V

10V

13V

11V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

30

60

90

120

150

00.511.522.533.544.55

V

CE

(V)

I

C

(A)

8V

7V

6V

9V

V

GE

= 15V

14V

13V

12V

10V

11V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

-50 -25 0 25 50 75 100 125 150 175

T

J

(ºC)

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 60A

I

C

= 30A

I

C

= 120A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

0

1

2

3

4

5

6

8 9 10 11 12 13 14 15

V

GE

- (V)

V

CE

(V)

I

C

= 120A

T

J

= 25ºC

60A

30A

Fig. 6. Input Admittance

0

20

40

60

80

100

120

140

4567891011

V

GE

(V)

I

C

(

A)

T

J

= 150ºC

25ºC

- 40ºC

IXYH75N65C3

IXYH75N65C3

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