SF1200, SF1600
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Vishay Semiconductors
Rev. 1.8, 11-Sep-12
1
Document Number: 86059
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Very low switching losses
• Glass passivated
• High reverse voltage
• Hermetically sealed axial-leaded glass
envelope
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Switched mode power supplies
• High-frequency inverter circuits
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
SF1600 SF1600-TR 5000 per 10" tape and reel 25 000
SF1600 SF1600-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
SF1200 V
R
= 1200 V; I
F(AV)
= 1 A SOD-57
SF1600 V
R
= 1600 V; I
F(AV)
= 1 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
SF1200 V
R
= V
RRM
1200 V
SF1600 V
R
= V
RRM
1600 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
30 A
Average forward current
Half sine wave, V
R
= V
RRM
,
R
thJA
= 45 K/W
I
F(AV)
1A
Max. pulse energy in avalanche
mode, non repetitive (inductive load
switch off
I
(BR)R
= 400 mA, inductive load E
R
10 mJ
Junction and storage temperature
range
T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, T
L
= constant R
thJA
45 K/W