SF1600-TR

SF1200, SF1600
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
1
Document Number: 86059
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultrafast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
Very low switching losses
Glass passivated
High reverse voltage
Hermetically sealed axial-leaded glass
envelope
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
Switched mode power supplies
High-frequency inverter circuits
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
SF1600 SF1600-TR 5000 per 10" tape and reel 25 000
SF1600 SF1600-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
SF1200 V
R
= 1200 V; I
F(AV)
= 1 A SOD-57
SF1600 V
R
= 1600 V; I
F(AV)
= 1 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak
reverse voltage
See electrical characteristics
SF1200 V
R
= V
RRM
1200 V
SF1600 V
R
= V
RRM
1600 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
30 A
Average forward current
Half sine wave, V
R
= V
RRM
,
R
thJA
= 45 K/W
I
F(AV)
1A
Max. pulse energy in avalanche
mode, non repetitive (inductive load
switch off
I
(BR)R
= 400 mA, inductive load E
R
10 mJ
Junction and storage temperature
range
T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, T
L
= constant R
thJA
45 K/W
SF1200, SF1600
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
2
Document Number: 86059
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 1 A V
F
--3.4V
Reverse current
V
R
= V
RRM
I
R
--5μA
V
R
= V
RRM
, T
j
= 125 °C I
R
- - 50 μA
Reverse breakdown voltage l
R
= 100 μA
SF1200 V
(BR)R
1250 - - V
SF1600 V
(BR)R
1650 - - V
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 75 ns
0.001
0.01
0.1
1
10
100
16463
012 4
5
69783
V
F
-
Forward Voltage (V)
I
F
- Forward Current (A)
T
j
= 175 °C
T
j
= 25 °C
0.0
0.2
0.4
0.6
0.8
1.0
15789
0 20 40 80 100 120 180140 16060
V
R
= V
RRM
half sine wave
R
thJA
= 100 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
l = 10 mm
I
FAV
- Average Forward Current (A)
T
amb
-
Ambient Temperature (°C)
1
10
100
1000
25 50 75 100 125 150 175
16464
V
R
= V
RRM
I
R
- Reverse Current (μA)
T
j
-
Junction Temperature (°C)
0
100
200
300
400
500
600
700
25 50 75 100 125 150 175
16465
P
R
- Reverse Power Dissipation (mW)
T
j
-
Junction Temperature (°C)
P
R
- Limit
at 100 % V
R
V
R
= V
RRM
P
R
- Limit
at 80 % V
R
SF1200, SF1600
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 11-Sep-12
3
Document Number: 86059
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
5
10
15
20
25
30
0.1 1.0 10.0 100.0
16466
f = 1 MHz
V
R
-
Reverse Voltage (V)
C
D
- Diode Capacitance (pF)
20543
3.6 (0.142) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
0.82 (0.032) max.

SF1600-TR

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1.0 Amp 1600 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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