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MRF9030LSR5

P1-P3P4-P6P7-P9P10-P10
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4
RF Device Data
Freescale Semiconductor
MRF9030LSR1
Z11
C17
Figure 1. 945 MHz Broadband Test Circuit Schematic
RF
INPUT
RF
OUTPUT
Z1 Z2
V
GG
C1
L1
V
DD
B1 Short Ferrite Bead
B2 Long Ferrite Bead
C1, C8, C13, C14 47 pF Chip Capacitors
C2, C4 0.8 pF to 8.0 pF Trim Capacitors
C3 3.9 pF Chip Capacitor
C5, C6 7.5 pF Chip Capacitors
C7, C15, C16 10 µF, 35 V Tantalum Capacitors
C9, C10 10 pF Chip Capacitors
C11 9.1 pF Chip Capacitor
C12 0.6 pF to 4.5 pF Trim Capacitor
C17 220 µF, 50 V Electrolytic Capacitor
L1, L2 12.5 nH Surface Mount Inductors
Z1 0.260″ x 0.060″ Microstrip
Z2 0.240″ x 0.060″ Microstrip
Z3 0.500″ x 0.100″ Microstrip
Z4 0.215″ x 0.270″ Microstrip
Z5 0.315″ x 0.270″ Microstrip
Z6 0.160″ x 0.270″ x 0.520″, Taper
Z7 0.285″ x 0.520″ Microstrip
Z8 0.450″ x 0.270″ Microstrip
Z9 0.140″ x 0.270″ Microstrip
Z10 0.250″ x 0.060″ Microstrip
Z11 0.720″ x 0.060″ Microstrip
Z12 0.490″ x 0.060″ Microstrip
Z13 0.290″ x 0.060″ Microstrip
PCB Taconic RF -35- 0300, 30 mil,
ε
r
= 3.55
Z3
Z8 Z9
Z7
Z5 Z6
L2
B2
Z4
Z10
C15
Figure 2. 945 MHz Broadband Test Circuit Component Layout
B1
C1
C2
C3
C5
C7
C8
C9
C10
C6
C11
C12
C13
C14
C15 C16
C17
L1
L2
Rev−02
900 MHz
MRF9030
C7
C2
C5
C16
C9
Z12 Z13
C4
C13
CUT OUT AREA
+
+++
DUT
C8
C14
C3 C4 C6
C10 C11 C12
V
GG
V
DD
RF INPUT
RF OUTPUT
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
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MRF9030LSR1
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
960
12
20
930
−38
50
IRL
G
ps
η
IMD
V
DD
= 26 Vdc
P
out
= 30 W (PEP)
I
DQ
= 250 mA
Two−Tone, 100 kHz Tone Spacing
f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
G
ps
, POWER GAIN (dB)
INTERMODULATION DISTORTION (dBc)IMD,
, DRAIN EFFICIENCY (%)η
19 45
18 40
17 35
16 −30
15 −32
14 −34
13 −36
955950945940935
−18
−10
−12
−14
−16
INPUT RETURN LOSS (dB)IRL,
100
17
20
1
I
DQ
= 375 mA
300 mA
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 4. Power Gain versus Output Power
G
ps
, POWER GAIN (dB)
19.5
19
18.5
18
17.5
10
250 mA
200 mA
100
−60
−50
1
I
DQ
= 200 mA
300 mA
V
DD
= 26 Vdc
f1 = 945 MHz, f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Intermodulation Distortion versus
Output Power
INTERMODULATION DISTORTION (dBc)IMD,
−20
−30
−40
10
375 mA
250 mA
100
−70
0
1
3rd Order
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
P
out
, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products
versus Output Power
INTERMODULATION DISTORTION (dBc)IMD,
10
−10
−20
−30
−40
−50
−60
5th Order
7th Order
100
10
22
0.1
0
60
G
ps
η
V
DD
= 26 Vdc
I
DQ
= 250 mA
f = 945 MHz
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 7. Power Gain and Efficiency versus
Output Power
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)η
20 50
18 40
16 30
14 20
12 10
101
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6
RF Device Data
Freescale Semiconductor
MRF9030LSR1
TYPICAL CHARACTERISTICS
210
10
10
T
J
, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere
2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by I
D
2
for MTTF in a particular application.
10
8
10
7
MTTF FACTOR (HOURS X AMPS
2
)
90 110 130 150 170 190100 120 140 160 180 200
10
9
100
8
20
1
−60
60
G
ps
η
IMD
P
out
, OUTPUT POWER (WATTS) PEP
Figure 8. Power Gain, Efficiency and IMD
versus Output Power
G
ps
, POWER GAIN (dB)
, DRAIN EFFICIENCY (%)η
18 40
16 20
14 0
12 −20
10 −40
10
INTERMODULATION DISTORTION (dBc)IMD,
V
DD
= 26 Vdc
I
DQ
= 250 mA
f1 = 945 MHz, f2 = 945.1 MHz
Figure 9. MTTF Factor versus Junction Temperature
P1-P3P4-P6P7-P9P10-P10

MRF9030LSR5

Mfr. #:
Buy MRF9030LSR5
Manufacturer:
NXP Semiconductors
Description:
FET RF 68V 945MHZ NI-360S
Lifecycle:
New from this manufacturer.
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