IRF2907Z/S/LPbF
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L=0.095mH,
R
G
= 25Ω, I
AS
= 75A, V
GS
=10V.
Part not recommended for use above this value.
I
SD
≤ 75A, di/dt ≤ 340A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from
0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population.
100% tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
R
θ
is measured at T
J
of approximately 90°C.
TO-220 device will have an Rth of 0.45°C/W.
∗ Calculated continuous current based on maximum
allowable junction temperature. Bond wire current limit is
160A.Note that current limitations arising from heating of
the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140 http://www.irf.com/
technical-info/appnotes/an-1140.pdf)
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
e75––––––V
∆Β
V
DSS
∆
T
J
Breakdown Volta
e Temp. Coefficient ––– 0.069 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 3.5 4.5
mΩ
V
GS(th)
Gate Threshold Volta
e 2.0 ––– 4.0 V
fs Forward Transconductance 180 ––– ––– S
I
DSS
Drain-to-Source Leaka
e Current ––– ––– 20
A
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
e ––– ––– -200
Q
g
Total Gate Char
e ––– 180 270
Q
gs
Gate-to-Source Char
e ––– 46 ––– nC
Q
gd
Gate-to-Drain ("Miller") Char
e ––– 65 –––
t
d(on)
Turn-On Dela
Time –––19–––ns
t
r
Rise Time ––– 140 –––
t
d(off)
Turn-Off Dela
Time –––97–––
t
f
Fall Time ––– 100 –––
L
D
Internal Drain Inductance ––– 5.0 ––– nH Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 13 ––– from packa
e
and center of die contact
C
iss
Input Capacitance ––– 7500 ––– pF
C
oss
Output Capacitance ––– 970 –––
C
rss
Reverse Transfer Capacitance ––– 510 –––
C
oss
Output Capacitance ––– 3640 –––
C
oss
Output Capacitance ––– 650 –––
C
oss
eff.
Effective Output Capacitance ––– 1020 –––
Diode Characteristics
Parameter Min. T
p. Max. Units
I
S
Continuous Source Current
(Body Diode) A
I
SM
Pulsed Source Current
(Body Diode)
V
SD
Diode Forward Voltage
––– ––– 1.3 V
t
rr
Reverse Recovery Time
––– 41 61 ns
Q
rr
Reverse Recover
Char
e ––– 59 89 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
–––
–––
–––
160*
680
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 75V, V
GS
= 0V
V
DS
= 75V, V
GS
= 0V, T
J
= 125°C
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
T
J
= 25°C, I
F
= 75A, V
DD
= 38V
di/dt = 100A/
s
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 10V
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 60V, ƒ = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 60V
ƒ = 1.0MHz, See Fig. 5
R
G
= 2.5
Ω
I
D
= 75A
V
DS
= 25V, I
D
= 75A
V
DD
= 38V
I
D
= 75A
V
GS
= 20V
V
GS
= -20V
V
DS
= 60V
V
GS
= 10V
