PSMN015-110P_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 6 October 2009 3 of 13
NXP Semiconductors
PSMN015-110P
N-channel TrenchMOS SiliconMAX standard level FET
4. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage T
j
≥ 25 °C; T
j
≤ 175 °C - 110 V
V
DGR
drain-gate voltage T
j
≤ 175 °C; T
j
≥ 25 °C; R
GS
=20kΩ -110V
V
GS
gate-source voltage -20 20 V
I
D
drain current V
GS
=10V; T
mb
=25°C; see Figure 1 and 3 -75A
V
GS
=10V; T
mb
= 100 °C; see Figure 1 -60.8A
I
DM
peak drain current t
p
≤ 10 µs; pulsed; T
mb
=25°C; see Figure 3 -240A
P
tot
total power dissipation T
mb
=25°C; see Figure 2 -300W
T
stg
storage temperature -55 175 °C
T
j
junction temperature -55 175 °C
Source-drain diode
I
S
source current T
mb
=25°C - 75 A
I
SM
peak source current t
p
≤ 10 µs; pulsed; T
mb
=25°C - 240 A
Avalnche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
V
GS
=10V; T
j(init)
=25°C; I
D
=36A;
V
sup
≤ 50 V; unclamped; t
p
= 0.11 ms;
R
GS
=50Ω
-320mJ
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03an67
0
40
80
120
0 50 100 150 200
I
der
(%)
T
mb
(°C)
T
mb
(°C)
0 20015050 100
03aa16
40
80
120
P
der
(%)
0
