PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 3 of 12
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
3. Ordering information
4. Marking
5. Limiting values
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1, 3, 4 or 6 to pin 2 or 5.
Table 4. Ordering information
Type number Package
Name Description Version
PRTR5V0U2F XSON6 plastic extremely thin small outline package;
no leads; 6 terminals; body 1 × 1.45 × 0.5 mm
SOT886
PRTR5V0U2K XSON6 plastic extremely thin small outline package;
no leads; 6 terminals; body 1 × 1 × 0.5 mm
SOT891
Table 5. Marking codes
Type number Marking code
PRTR5V0U2F PF
PRTR5V0U2K PK
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
T
amb
ambient temperature 40 +85 °C
T
stg
storage temperature 55 +125 °C
Table 7. ESD maximum ratings
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per channel
V
ESD
electrostatic discharge voltage IEC 61000-4-2
(contact discharge)
[1][2]
-8kV
MIL-STD-883 (human
body model)
[2]
-10kV
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 4 of 12
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
Table 8. ESD standards compliance
Standard Conditions
Per channel
IEC 61000-4-2; level 4 (ESD) > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
Fig 1. ESD pulse waveform according to IEC 61000-4-2
001aaa631
I
PP
100 %
90 %
t
30 ns
60 ns
10 %
t
r
= 0.7 ns to 1 ns
PRTR5V0U2F_PRTR5V0U2K_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 19 February 2009 5 of 12
NXP Semiconductors
PRTR5V0U2F; PRTR5V0U2K
Ultra low capacitance double rail-to-rail ESD protection
6. Characteristics
[1] Measured from pin 1, 3, 4 or 6 to ground.
[2] Measured from pin 1 or 6 to pin 3 or 4.
[3] Measured from pin 1, 3, 4 or 6 to pin 5.
[4] Measured from pin 5 to ground.
Table 9. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per channel
I
R
reverse current V
R
=5V
[1]
- < 1 100 nA
C
(I/O-GND)
input/output to ground
capacitance
f = 1 MHz;
V
(I/O-GND)
=0V
[1]
- 1.0 1.5 pF
C
(I/O-I/O)
input/output to input/output
capacitance
f = 1 MHz;
V
(I/O-I/O)
=0V
[2]
- 0.6 - pF
V
F
forward voltage I
F
=1mA
[3]
- 0.7 - V
Zener diode
V
RWM
reverse standoff voltage
[4]
- - 5.5 V
V
BR
breakdown voltage
[4]
6- 9V
C
sup
supply pin to ground
capacitance
f = 1 MHz;
V
CC
=0V
[4]
-16-pF
f = 1 MHz; T
amb
=25°C f = 1 MHz; T
amb
=25°C
Fig 2. Input/output to ground capacitance as a
function of input/output to ground voltage;
typical values
Fig 3. Input/output to ground capacitance as a
function of input/output to input/output
voltage; typical values
V
(I/O-GND)
(V)
054231
006aaa483
0.8
1.2
0.4
1.6
2.0
C
(I/O-GND)
(pF)
0
V
(I/O-I/O)
(V)
054231
006aaa484
0.4
0.6
0.2
0.8
1.0
C
(I/O-I/O)
(pF)
0

PRTR5V0U2K,132

Mfr. #:
Manufacturer:
Nexperia
Description:
TVS DIODE 5.5V 6XSON SOT891
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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