IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 15 V; I
D
= I
T
Note 1 4 10 S
C
iss
2900 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 315 pF
C
rss
50 pF
t
d(on)
20 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
23 ns
t
d(off)
R
G
= 1 Ω (External), 40 ns
t
f
15 ns
Q
g(on)
90 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= I
T
30 nC
Q
gd
40 nC
R
thJC
0.50 K/W
R
thCK
0.15 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 12 A
I
SM
Repetitive; pulse width limited by T
JM
48 A
V
SD
I
F
= I
S
, V
GS
= 0 V, Note 1 1.3 V
t
rr
200 300 ns
Q
RM
1.6 µC
I
RM
7A
I
F
= I
s
, -di/dt = 100 A/µs, V
R
= 100 V
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. I
T
test current: IXFR10N100 I
T
= 5A
IXFR12N100 I
T
= 6A
IXFR 10N100Q
IXFR 12N100Q
ISOPLUS 247 OUTLINE
Note: Please see IXFH12N100Q
Data Sheet for characteristic
curves.
