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DB2441600L

P1-P3P4-P5
Product Standards
Schottky Barrier Diode
DB2441600L
Absolute Maximum Ratings Ta = 25 C
Note: *1 For embedded alumina substrate (substrate size: 5 cm× 5 cm)
*2 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Page
°C-55 to +125Storage temperature Tstg
-40 toToprOperating ambient temperature
Internal Connection
Junction temperature Tj 125 °C
UnitParameter Symbol Rating
Reverse voltage
1of4
Unit: mm
2. Anode
Forward current (Average) IF(AV) = 3 A rectification is possible
Low forward voltage VF
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
DB2441600L
Silicon epitaxial planar type
For rectification
Features
Code
1. Cathode
―
Panasonic TMiniP2-F2-B
JEITA SC-110A
VR 40
4P
Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
V
Non-repetitive peak forward surge current
*2
IFSM
3.0
Forward current (Average)
*1
IF(AV)
°C
A
50 A
+85
1
2
4.7
2.4
0.85
3.8
1.75
0.15
2
1
Doc No.
TT4-EA-12393
Revision.
3
Established
:
2010-03-01
Revised
:
2013-04-19
Product Standards
Schottky Barrier Diode
DB2441600L
Electrical Characteristics Ta = 25 C 3 C
Note
)
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3. *1 trr test circuit
Page
VF IF = 3.0 A
μA300
2of
IF = IR = 100 mA
V
VR = 40 V
4
0.40
60
0.45
95 pF
ns
UnitMaxMin Typ
Ct VR = 10 V, f = 1 MHz
Parameter Symbol Conditions
Terminal capacitance
Reverse current IR
Forward voltage
Reverse recovery time
*1
trr 30
Irr = 10 mA, RL = 100
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 μs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
Doc No.
TT4-EA-12393
Revision.
3
Established
:
2010-03-01
Revised
:
2013-04-19
Product Standards
Schottky Barrier Diode
DB2441600L
Technical Data ( reference )
Page 3 of 4
IF - VF
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Forward voltage VF (V)
Forward current IF (A)
Ta = 125 °C
-40 °C
25 °C
85 °C
IR - VR
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
0 5 10 15 20 25 30 35 40
Reverse voltage VR (V)
Reverse current IR (A)
Ta = 125 °C
25 °C
-40 °C
85 °C
Ct - VR
0
100
200
300
400
500
600
700
0 5 10 15 20 25 30 35 40
Reverse voltage VR (V)
Terminal capacitance Ct (pF)
Ta = 25 °C
f = 1 MHz
Rth
- t
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
Time t (s)
Thermal resistance Rth (°C/W)
(1)
Rth(j-l) = 9 °C/W
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
(2)
(3)
IF(AV) - Tl
0
0.5
1
1.5
2
2.5
3
3.5
0 25 50 75 100 125 150 175
Lead temperature Tl (°C)
Forward current (Average) IF(AV) (A)
DC
1/4
tp/T
1/2
Sine Wave
VR = 20 V
Tj = 125 °C
tp
T
IF
PF(AV) - IF(AV)
0
0.5
1
1.5
2
0 0.5 1 1.5 2 2.5 3 3.5
Forward current (Average) IF(AV) (A)
Forward power dissipation (Average) PF(AV) (W)
DC
1/4
1/2
Sine Wave
tp
T
IF
Doc No.
TT4-EA-12393
Revision.
3
Established
:
2010-03-01
Revised
:
2013-04-19
P1-P3P4-P5

DB2441600L

Mfr. #:
Buy DB2441600L
Manufacturer:
Panasonic
Description:
Diodes - General Purpose, Power, Switching Schottky Barrier Diode
Lifecycle:
New from this manufacturer.
Delivery:
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