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MTM231232LBF

P1-P3P4-P6P7-P7
Product Standards
MOS FET
MTM231232LBF
Technical Data ( reference )
Page
Dynamic Input/Output Characteristics
4of6
Capacitance - VDS
ID - VDS ID - VGS
VDS - VGS RDS(on) - ID
-0.01
-0.008
-0.006
-0.004
-0.002
0
-1.2-1-0.8-0.6-0.4-0.20
Gate-source Voltage VGS (V)
Drain Current ID (A)
Ta = 85 C
-30 C
25 C
-10
-8
-6
-4
-2
0
0 5 10 15 20 25 30
Total Gate Charge Qg (nC)
Gate-source Voltage VGS (V)
VDD = -10 V
-0.5
-0.4
-0.3
-0.2
-0.1
0
-6-5-4-3-2-10
Gate-source Voltage VGS (V)
Drain-source Voltage VDS (V)
ID = -2 A
-1 A
-0.5 A
10
100
-0.1 -1
Drain Current ID (A)
Drain-source On-state Resistance
RDS(on) (m
)
-4 V
VGS = -2.5 V
-3
-2.5
-2
-1.5
-1
-0.5
0
-0.6-0.5-0.4-0.3-0.2-0.10
Drain-source Voltage VDS (V)
Drain Current ID (A)
-1.5 V
-2 V
-2.5 V
-4 V
VGS = -1 V
10
100
1000
10000
-0.1 -1 -10 -100
Drain-source voltage VDS (V)
Capacitance C (pF)
Ciss
Coss
Crss
Doc No.
TT4-EA-14177
Revision.
2
Established
2012-04-21
Revised
2013-03-07
Product Standards
MOS FET
MTM231232LBF
Technical Data ( reference )
Page 5 of
Rth - tsw
6
Vth - Ta RDS(on) - Ta
PD - Ta
Safe Operating Area
0
-0.5
-1
-50 0 50 100 150
Temperature Ta (C)
Gate-source Threshold Voltage Vth (V)
0
10
20
30
40
50
60
70
-50 0 50 100 150
Temperature Ta (C)
Drain-source On-state Resistance
RDS(on) (m
)
-4 V
VGS = -2.5 V
0
0.2
0.4
0.6
0.8
0 50 100 150
Temperature Ta (C)
Total Power Dissipation PD (W)
Measuring on ceramic substrate
at (40 mm 38 mm 0.1 mm)
Non-heat sink
10
100
1000
0.1 1 10 100 1000
Pulse Width tsw (s)
Thermal resistance Rth (
C/W)
-0.001
-0.01
-0.1
-1
-10
-100
-0.01 -0.1 -1 -10 -100
Drain-source voltage VDS (V)
Drain Current ID (A)
IDp = -16 A
Operation in this area
is limited by RDS(on)
Ta = 25 C,
Glass epoxy board (25.4 25.4 0.8 mm)
coated with copper foil,which has
more than 300 mm
2
.
10 ms
100 ms
1 ms
1 s
DC
Doc No.
TT4-EA-14177
Revision.
2
Established
2012-04-21
Revised
2013-03-07
Product Standards
MOS FET
MTM231232LBF
Unit : mm
Page 6
SMini3-G1-B
6of
Land Pattern (Reference) (Unit : mm)
0.8
0.9
1.9
1.3
0.3
+0.1
0.0
2.1
±0.1
1.25
±0.10
0.15
+0.10
-0.05
0 to 0.1
1.3
±0.1
2.0
±0.2
(0.425)
(0.65) (0.65)
0.2
±0.1
0.9
+0.2
-0.1
0.9
±0.1
(8°)
(10°)
12
3
Doc No.
TT4-EA-14177
Revision.
2
Established
2012-04-21
Revised
2013-03-07
P1-P3P4-P6P7-P7

MTM231232LBF

Mfr. #:
Buy MTM231232LBF
Manufacturer:
Panasonic
Description:
MOSFET P-ch Power MOSFET SOT-323
Lifecycle:
New from this manufacturer.
Delivery:
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