SQJQ402E-T1_GE3 Datasheet SQJQ402E-T1_GE3 | P1-P3

SQJQ402E

www.vishay.com

Vishay Siliconix

S14-2246-Rev. A, 10-Nov-14

1

Document Number: 62748

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 40 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• AEC-Q101 qualified

• 100 % R

g

and UIS tested

• Thin 1.9 mm height

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square Pcb (Fr4 material).

d. See solder profile (www.vishay.com/doc?73257

). The PowerPAK 8x8L is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

PRODUCT SUMMARY

V

DS

(V) 40

R

DS(on)

(Ω) at V

GS

= 10 V 0.0017

R

DS(on)

(Ω) at V

GS

= 4.5 V 0.0020

I

D

(A) 200

Configuration Single

4

3

2

1

Top View

PowerPAK

®

8x8L Single

S

SSG

4

3

2

1

S

SS G

Bottom View

8.1 mm

8 mm

D

1.9 mm

N-Channel MOSFET

D

G

S

ORDERING INFORMATION

Package PowerPAK 8x8L

Lead (Pb)-free and Halogen-free SQJQ402E-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

40

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

T

C

= 25 °C

a

I

D

200

A

T

C

= 125 °C 127

Continuous Source Current (Diode Conduction) I

S

200

Pulsed Drain Current

b

I

DM

300

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

85

Single Pulse Avalanche Energy E

AS

361 mJ

Maximum Power Dissipation

T

C

= 25 °C

P

D

150

W

T

C

= 125 °C 50

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +175

°C

Soldering Recommendations (Peak Temperature)

d, e

260

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

50

°C/W

Junction-to-Case (Drain) R

thJC

1

SQJQ402E

www.vishay.com

Vishay Siliconix

S14-2246-Rev. A, 10-Nov-14

2

Document Number: 62748

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= 250 μA 40 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 1.5 2 2.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= 40 V - - 1

μA V

GS

= 0 V V

DS

= 40 V, T

J

= 125 °C - - 50

V

GS

= 0 V V

DS

= 40 V, T

J

= 175 °C - - 150

On-State Drain Current

a

I

D(on)

V

GS

= 10 V V

DS

≥ 5 V 100 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 20 A - 0.0013 0.0017

Ω

V

GS

= 4.5 V I

D

= 10 A - 0.0015 0.0020

V

GS

= 10 V I

D

= 20 A, T

J

= 125 °C - - 0.0026

V

GS

= 10 V I

D

= 20 A, T

J

= 175 °C - - 0.0031

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 20 A - 140 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= 20 V, f = 1 MHz

- 10 760 13 500

pF Output Capacitance C

oss

- 1370 1800

Reverse Transfer Capacitance C

rss

- 650 850

Total Gate Charge

c

Q

g

V

GS

= 10 V V

DS

= 20 V, I

D

= 40 A

- 169 260

nC Gate-Source Charge

c

Q

gs

-32 -

Gate-Drain Charge

c

Q

gd

-29 -

Gate Resistance R

g

f = 1 MHz 0.6 1.3 2.5 Ω

Turn-On Delay Time

c

t

d(on)

V

DD

= 20 V, R

L

= 0.5 Ω

I

D

≅ 40 A, V

GEN

= 10 V, R

g

= 1 Ω

-1930

ns

Rise Time

c

t

r

-1525

Turn-Off Delay Time

c

t

d(off)

- 69 110

Fall Time

c

t

f

-1120

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

- - 300 A

Forward Voltage V

SD

I

F

= 50 A, V

GS

= 0 - 0.82 1.2 V

SQJQ402E

www.vishay.com

Vishay Siliconix

S14-2246-Rev. A, 10-Nov-14

3

Document Number: 62748

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transfer Characteristics

On-Resistance vs. Drain Current

Capacitance

Gate Charge

On-Resistance vs. Junction Temperature

0

50

100

150

200

250

03691215

I

D

- Drain Current (A)

V

DS

-Drain-to-Source Voltage (V)

V

GS

= 10 V thru 4 V

V

GS

= 3 V

0

32

64

96

128

160

0246810

I

D

- Drain Current (A)

V

GS

- Gate-to-Source Voltage (V)

T

C

= -55 °C

T

C

= 125 °C

T

C

= 25 °C

0.0000

0.0010

0.0020

0.0030

0.0040

0.0050

0 20406080100

R

DS(on)

-On-Resistance (Ω)

I

D

- Drain Current (A)

V

GS

= 4.5 V

V

GS

= 10 V

0

3200

6400

9600

12 800

16 000

0 8 16 24 32 40

C - Capacitance (pF)

V

DS

-Drain-to-Source Voltage (V)

C

iss

C

oss

C

rss

0

2

4

6

8

10

0 40 80 120 160 200

V

GS

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

I

D

= 40 A

V

DS

= 20 V

0.5

0.8

1.1

1.4

1.7

2.0

- 50 - 25 0 25 50 75 100 125 150 175

R

DS(on)

-On-Resistance

(Normalized)

T

J

- Junction Temperature (°C)

I

D

= 20 A

V

GS

= 4.5 V

V

GS

= 10 V

SQJQ402E-T1_GE3

SQJQ402E-T1_GE3

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