OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

VS-MBRD340TR-M3

P1-P3P4-P6P7-P7
VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
1
Document Number: 93323
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High Performance Schottky Rectifier, 3.0 A
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Popular D-PAK outline
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
The VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
surface mount Schottky rectifier has been designed for
applications requiring low forward drop and small foot prints
on PC boards. Typical applications are in disk drives,
switching power supplies, converters, freewheeling diodes,
battery charging, and reverse battery protection.
PRODUCT SUMMARY
Package D-PAK (TO-252AA)
I
F(AV)
3.0 A
V
R
20 V, 30 V, 40 V
V
F
at I
F
0.49 V
I
RM
20 mA at 125 °C
T
J
max. 150 °C
Diode variation Single die
E
AS
8 mJ
Anode
1
3
Base
cathode
Anode
4, 2
D-PAK (TO-252AA)
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
Rectangular waveform 3.0 A
V
RRM
20 to 40 V
I
FSM
t
p
= 5 μs sine 490 A
V
F
3 A
pk
, T
J
= 125 °C 0.49 V
T
J
-40 to +150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBRD320-M3 VS-MBRD330-M3 VS-MBRD340-M3 UNITS
Maximum DC reverse voltage V
R
20 30 40 V
Maximum working peak reverse voltage V
RWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
50 % duty cycle at T
L
= 133 °C, rectangular waveform 3.0
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
5 μs sine or 3 μs rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
490
10 ms sine or 6 ms rect. pulse 75
Non-repetitive avalanche energy E
AS
T
J
= 25 °C, I
AS
= 1 A, L = 16 mH 8.0 mJ
Repetitive avalanche current I
AR
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
1.0 A
VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
2
Document Number: 93323
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
3 A
T
J
= 25 °C
0.48 0.6
V
6 A 0.58 0.7
3 A
T
J
= 125 °C
0.41 0.49
6 A 0.55 0.625
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.02 0.2
mA
T
J
= 125 °C 10.7 20
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz), 25 °C 189 - pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 5.0 - nH
Maximum voltage rate of change dV/dt Rated V
R
- 10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
J
(1)
-40 to +150
°C
Maximum storage temperature range T
Stg
-40 to +175
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
6.0
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
80
Approximate weight
0.3 g
0.01 oz.
Marking device Case style D-PAK (similar to TO-252AA)
MBRD320
MBRD330
MBRD340
dP
tot
dT
J
-------------
1
R
thJA
--------------<
VS-MBRD320-M3, VS-MBRD330-M3, VS-MBRD340-M3
www.vishay.com
Vishay Semiconductors
Revision: 22-Nov-16
3
Document Number: 93323
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
0.1
100
10
I
F
- Instantaneous Forward Current (A)
V
FM
- Forward Voltage Drop (V)
0.2 0.4 0.8
1.2
0.6 1.0
0
1
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0.001
1
10
100
0.1
0.01
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
1051520 4025 30 350
T
J
= 150 °C
T
J
= 125 °C
T
J
= 100 °C
T
J
= 75 °C
T
J
= 50 °C
T
J
= 25 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
10515202535404530
0
T
J
= 25 °C
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Impedance (°C/W)
1
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
P
DM
t
1
t
2
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
P1-P3P4-P6P7-P7

VS-MBRD340TR-M3

Mfr. #:
Buy VS-MBRD340TR-M3
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers Schottky - D-PAK-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet