AD8397
Rev. A | Page 7 of 16
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter Rating
Supply Voltage 26.4 V
Power Dissipation
1
See Figure 4
Storage Temperature Range −65°C to +125°C
Operating Temperature Range −40°C to +85°C
Lead Temperature (Soldering, 10 sec) 300°C
Junction Temperature 150°C
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
1
Thermal resistance for standard JEDEC 4-layer board:
8-lead SOIC_N: θ
JA
= 157.6°C/W
8-Lead SOIC_N_EP: θ
JA
= 47.2°C/W
MAXIMUM POWER DISSIPATION
The maximum power that can be dissipated safely by the AD8397
is limited by the associated rise in junction temperature. The
maximum safe junction temperature for plastic encapsulated
devices is determined by the glass transition temperature of the
plastic, approximately 150°C. Temporarily exceeding this limit
may cause a shift in parametric performance due to a change in
the stresses exerted on the die by the package.
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
–40–30–20–100 102030405060708090
05069-020
AMBIENT TEMPERATURE (°C)
MAXIMUM POWER DISSIPATION (W)
T
J
= 150°C
8-LEAD SOIC
Figure 4. Maximum Power Dissipation vs. Ambient Temperature
ESD CAUTION
