OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

SI8902AEDB-T2-E1

P1-P3P4-P6P7-P9P10-P11
Si8902AEDB
www.vishay.com
Vishay Siliconix
S15-1171-Rev. B, 25-May-15
1
Document Number: 62948
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
N-Channel 24 V (D-S) MOSFET
Marking Code: 8902AE
Ordering Information:
Si8902AEDB-T2-E1 (Lead (Pb)-free and Halogen-free)
FEATURES
• TrenchFET
®
power MOSFET
• Small 2.4 mm x 1.6 mm outline
• Thin 0.6 mm max. height
• Typical ESD protection 5000 V (HBM)
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Battery protection switch
• Bi-directional switch
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.
b. The case is defined as the top surface of the package.
c. Refer to IPC/JEDEC
®
(J-STD-020), no manual or hand soldering.
d. Maximum under steady state conditions is 120 °C/W.
PRODUCT SUMMARY
V
S1S2
(V) R
S1S2
(Ω) Max. I
S1S2
(A)
a
24
0.028 at V
GS
= 4.5 V 5.9
0.029 at V
GS
= 3.7 V 5.8
0.031 at V
GS
= 2.5 V 5.6
0.037 at V
GS
= 1.8 V 5.1
MICRO FOOT
®
2.4 x 1.6
Backside View
1
1.6 mm
2.4 mm
8902AE
xxx
Bump Side View
5
S
2
6
G
2
1
S
1
S
2
4
G
1
3
S
1
2
G
2
S
2
G
1
S
1
N-Channel
R
R
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Source 1-to-Source 2 Voltage V
S1S2
24
V
Gate-Source Voltage V
GS
± 12
Continuous Source 1-to-Source 2 Current
(T
J
= 150 °C)
T
C
= 25 °C
I
S1S2
11
b
A
T
C
= 85 °C 7.9
b
T
A
= 25 °C 5.9
a
T
A
= 85 °C 4.3
a
Pulsed Source 1-to-Source 2 Current (t = 100 μs) I
SM
40
Maximum Power Dissipation
T
C
= 25 °C
P
D
5.7
b
W
T
C
= 85 °C 3
b
T
A
= 25 °C 1.7
a
T
A
= 85 °C 0.9
a
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to 150
°C
Soldering Recommendations (Peak Temperature)
c
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a, d
t ≤ 5 s R
thJA
60 75
°C/W
Maximum Junction-to-Case
b
Steady State R
thJC
18 22
Si8902AEDB
www.vishay.com
Vishay Siliconix
S15-1171-Rev. B, 25-May-15
2
Document Number: 62948
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Source 1-to-Source 2 Breakdown Voltage V
S1S2
V
GS
= 0 V, I
S
= 250 μA 24 - - V
V
GS(th)
Temperature Coefficient ΔV
GS(th)
/T
J
I
S
= 250 μA - 3 - mV/°C
Gate-Source Threshold Voltage V
GS(th)
V
SS
= V
GS
, I
S
= 250 μA 0.4 - 0.9 V
Gate-Source Leakage I
GSS
V
SS
= 0 V, V
GS
= ± 4.5 V - - ± 0.2 μA
V
SS
= 0 V, V
GS
= ± 12 V - - ± 10 mA
Zero Gate Voltage Source Current I
S1S2
V
SS
= 24 V, V
GS
= 0 V - - 1
μA
V
SS
= 24 V, V
GS
= 0 V, T
J
= 85 °C - - 10
On-State Source Current
a
I
S(on)
V
SS
≥ 5 V, V
GS
= 4.5 V 5 - - A
Source1-to-Source 2 On-State Resistance
a
R
S1S2
V
GS
= 4.5 V, I
SS
= 1 A - 0.0215 0.0280
Ω
V
GS
= 3.7 V, I
SS
= 1 A - 0.0222 0.0290
V
GS
= 2.5 V, I
SS
= 1 A - 0.0240 0.0310
V
GS
= 1.8 V, I
SS
= 1 A - 0.0260 0.0370
Forward Transconductance
a
g
fs
V
SS
= 10 V, I
SS
= 1 A - 15 - S
Dynamic
b
Gate Resistance R
g
f = 1 MHz - 5.3 - kΩ
Turn-On Delay Time t
d(on)
V
SS
= 12.5 V, R
L
= 12.5 Ω
I
SS
≅ 1 A, V
GEN
= 4.5 V, R
g
= 1 Ω
-1.53
μs
Rise Time t
r
-3.57
Turn-Off Delay Time t
d(off)
-2550
Fall Time t
f
-1225
Turn-On Delay Time t
d(on)
V
SS
= 12.5 V, R
L
= 12.5 Ω
I
SS
≅ 1 A, V
GEN
= 10 V, R
g
= 1 Ω
-0.71.4
Rise Time t
r
-1.32.6
Turn-Off Delay Time t
d(off)
-3570
Fall Time t
f
-1225
Si8902AEDB
www.vishay.com
Vishay Siliconix
S15-1171-Rev. B, 25-May-15
3
Document Number: 62948
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Current vs. Gate-Source Voltage
Output Characteristics
On-Resistance vs. Drain Current
Gate Current vs. Gate-Source Voltage
Transfer Characteristics
On-Resistance vs. Junction Temperature
0
0.3
0.6
0.9
1.2
1.5
0 3 6 9 12
I
GSS
- Gate Current (mA)
V
GS
- Gate-Source Voltage (V)
T
J
= 25 °C
0
10
20
30
40
0.0 0.5 1.0 1.5 2.0 2.5 3.0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 1.5 V
V
GS
= 2.5 V
V
GS
= 5 V thru 3 V
V
GS
= 1 V
0
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25 30
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 1.8 V
V
GS
= 3.7 V
V
GS
= 2.5 V
V
GS
= 4.5 V
10
-2
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
0 3 6 9 12
I
GSS
- Gate Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= 25 °C
T
C
= 125 °C
T
C
= -
55
°
C
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
- 50 - 25 0 25 50 75 100 125 150
R
DS(on)
- On-Resistance
(Normalized)
T
J
- Junction Temperature (°C)
V
GS
= 4.5 V, 3.7 V, 2.5 V, 1.8V; I
D
= 1A
P1-P3P4-P6P7-P9P10-P11

SI8902AEDB-T2-E1

Mfr. #:
Buy SI8902AEDB-T2-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 24V Vds 12V Vgs MICRO FOOT 2.4 x 1.6
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet