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VS-ST230S08P0V

P1-P3P4-P6P7-P8
VS-ST230S...VPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-17
4
Document Number: 96113
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
80
90
100
110
120
130
Maximum Allowable Case Temperature (°C)
30°
60°
90°
120°
180°
Average On-State Current (A)
Conduction angle
R
thJC
(DC) = 0.1 K/W
Ø
0 50 100 150 200 250
70
80
90
100
110
120
130
0 100 200 300 400
DC
30°
60°
90°
120°
180°
Average On-State Current (A)
Maximum Allowable Case Temperature (°C)
Conduction period
R
thJC
(DC) = 0.1 K/W
Ø
50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0.8 K/W - Delta R
thSA
0
.
1
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
5
K
/
W
0
.
8
K
/
W
1.2 K/W
0
50
100
150
200
250
300
350
0 50 100 150 200 250
180°
120°
90°
60°
30°
RMS Limit
Conduction angle
Maximum Average On-State Power Loss (W)
Average On-State Current (A)
T
J
= 125 °C
Ø
50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
08 K/W - Delta R
thSA
0
.
1
K
/
W
0
.
1
6
K
/
W
0
.
2
K
/
W
0
.
3
K
/
W
0
.
4
K
/
W
0
.
5
K
/
W
0
.
8
K
/
W
1
.
2
K
/W
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300 350 400
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction period
Maximum Average On-State Power Loss (W)
Average On-State Current (A)
T = 125 °C
J
Ø
VS-ST230S...VPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-17
5
Document Number: 96113
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
2000
2500
3000
3500
4000
4500
5000
5500
1 10 100
Number Of Equal Amplitude
Half Cycle Current Pulses (N)
Peak Half Sine Wave On-State Current (A)
Initial T
J
= 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
At any rated load condition and with
rated V
RRM
applied following surge.
2000
2500
3000
3500
4000
4500
5000
5500
6000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave On-State Current (A)
Initial T
J
= 125 °C
No voltage reapplied
Rated V
RRM
reapplied
Maximum non repetitive surge current vs.
pulse drain duration.
Control of conduction may not be maintained.
Instantaneous On-State Voltage (V)
Instantaneous On-State Current (A)
10
100
1000
10 000
0.5 1.5 2.5 3.5 4.5
T
J
= 25 °C
T
J
= 125 °C
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Transient Thermal Impedance Z
thJC
(K/W)
Steady state value
R
thJC
= 0.1 K/W
(DC operation)
VS-ST230S...VPbF Series
www.vishay.com
Vishay Semiconductors
Revision: 28-Sep-17
6
Document Number: 96113
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 9 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
T
J
=25 °C
T
J
=125 °C
T
J
=-40 °C
(1) (2)
(3)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
< = 30 % rated dI
F
/dt : 10 V, 10 Ω
Frequency Limited by PG (AV)
rated dI
F
/dt : 20 V, 10 Ω; t
r
<=1 μs
t
r
< = 1 μs
(1) PGM = 10 W, t
p
= 4 ms
(2) PGM = 20 W, t
p
= 2 ms
(3) PGM = 40 W, t
p
= 1 ms
(4) PGM = 60 W, t
p
= 0.66 ms
Rectangular gate pulse
(4)
1 - Vishay Semiconductors product
- Thyristor
2
- Essential part number
3
- 0 = converter grade
4
10 - None = standard production
- PbF = lead (Pb)-free
- S = compression bonding stud
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
- P = stud base 3/4"-16UNF2A threads
7
- 0 = eyelet terminals (gate and auxiliary cathode leads)
1 = fast-on terminals (gate and auxiliary cathode leads)
8
Note: For metric device M16 x 1.5 contact factory
Device code
51 32 4 6 7 8 109
STVS- 23 0 S 16 P 0 V PbF
9 - V = glass-metal seal (only up to 1200 V)
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95082
P1-P3P4-P6P7-P8

VS-ST230S08P0V

Mfr. #:
Buy VS-ST230S08P0V
Manufacturer:
Vishay Semiconductors
Description:
SCR Modules Thyristors - TO-93 COMP RND-e3
Lifecycle:
New from this manufacturer.
Delivery:
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