VS-ST230S...VPbF Series
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Vishay Semiconductors
Revision: 28-Sep-17
3
Document Number: 96113
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Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
VALUES
UNITS
TYP. MAX.
Maximum peak gate power P
GM
T
J
= T
J
maximum, t
p
5 ms 10.0
W
Maximum average gate power P
G(AV)
T
J
= T
J
maximum, f = 50 Hz, d% = 50 2.0
Maximum peak positive gate current I
GM
T
J
= T
J
maximum, t
p
5 ms 3.0 A
Maximum peak positive gate voltage +V
GM
T
J
= T
J
maximum, t
p
5 ms
20
V
Maximum peak negative gate voltage -V
GM
5.0
DC gate current required to trigger I
GT
T
J
= - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units 12
V anode to cathode applied
180 -
T
J
= 25 °C 90 150 mA
T
J
= 125 °C 40 -
DC gate voltage required to trigger V
GT
T
J
= - 40 °C 2.9 -
VT
J
= 25 °C 1.8 3.0
T
J
= 125 °C 1.2 -
DC gate current not to trigger I
GD
T
J
= T
J
maximum
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
10 mA
DC gate voltage not to trigger V
GD
0.25 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range
T
J
-40 to 125
°C
Maximum storage temperature range T
Stg
-40 to 150
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.10
K/W
Maximum thermal resistance,
case to heatsink
R
thC-hs
Mounting surface, smooth, flat and greased 0.04
Mounting torque, ± 10 %
Non-lubricated threads
31
(275)
N · m
(lbf in)
Lubricated threads
24.5
(210)
Approximate weight 280 g
Case style See dimensions - link at the end of datasheet TO-93 (TO-209AB)
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.016 0.012
T
J
= T
J
maximum K/W
120° 0.019 0.020
90° 0.025 0.027
60° 0.036 0.037
30° 0.060 0.060