SPEC NO: DSAM8423 REV NO: V.1A DATE: JAN/23/2013 PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: C.H.HAN ERP: 1301002544
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
* Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3. Wavelength value is traceable to the CIE127-2007 compliant national standards.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min. Typ.
Super Bright Yellow (AlGaInP) White Diffused
150000 450000
Common Anode, Rt.
Hand Decimal.
*52000 *140000
SA40-19SYKWA
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Super Bright Yellow 590 nm I
F=20mA
λD [1] Dominant Wavelength Super Bright Yellow 590 nm I
F=20mA
Δλ1/2 Spectral Line Half-width Super Bright Yellow 20 nm I
F=20mA
C Capacitance Super Bright Yellow 20 pF V
F=0V;f=1MHz
V
F [2]
Forward Voltage
Per Segment Or (DP)
Super Bright Yellow
8.0
(4.0)
10.0
(5.0)
V I
F=20mA
I
R
Reverse Current
Per Segment Or (DP)
Super Bright Yellow
20
(10)
uA V
R=5V
Parameter Super Bright Yellow Units
Power dissipation
Per Segment Or (DP)
600
(150)
mW
DC Forward Current
Per Segment Or (DP)
60
(30)
mA
Peak Forward Current [1]
Per Segment Or (DP)
350
(175)
mA
Reverse Voltage
Per Segment Or (DP)
5
(5)
V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds
