IXYS reserves the right to change limits, test conditions, and dimensions.
IXTL2x240N055T
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %;
2. Drain and source Kelvin contact must be located less than 5 mm from
the plastic body.
Symbol Test Conditions Characteristic Values
(T
J
= 25°C unless otherwise specified)
Min. Typ. Max.
g
fs
V
DS
= 10 V; I
D
= 60 A, Note 1 80 132 S
R
G
3 Ω
C
iss
7600 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 1240 pF
C
rss
260 pF
t
d(on)
40 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25A 54 ns
t
d(off)
R
G
= 5 Ω (External) 63 ns
t
f
75 ns
Q
g(on)
170 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 25A 32 nC
Q
gd
48 nC
R
thJC
1.0 °C/W
R
thCS
0.25 °C/W
Source-Drain Diode Characteristic Values
T
J
= 25°C unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
I
S
V
GS
= 0 V 240 A
I
SM
Pulse width limited by T
JM
650 A
V
SD
I
F
= 50 A, V
GS
= 0 V, Note 1 1.0 V
t
rr
I
F
= 25 A, -di/dt = 100 A/μs40ns
V
R
= 30 V, V
GS
= 0 V
ISOPLUS i5-Pak
TM
(IXTL) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
Note:
1. TAB 6 - Electrically isolated from the
other pins.
2. All leads and tab are tin plated.
Leads:
1, 5: Drain
2, 4: Source
3: Gate
6. Isolated
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered
are derived from a subjective evaluation of the design, based upon prior knowledge and
experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves
the right to change limits, test conditions, and dimensions without notice.
