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SQM120N06-3m5L_GE3

P1-P3P4-P6P7-P9P10-P10
SQM120N06-3m5L
www.vishay.com
Vishay Siliconix
S13-2117-Rev. A, 07-Oct-13
1
Document Number: 63814
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive N-Channel 60 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
d
• 100 % R
g
and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PRODUCT SUMMARY
V
DS
(V) 60
R
DS(on)
() at V
GS
= 10 V 0.0035
R
DS(on)
() at V
GS
= 4.5 V 0.0039
I
D
(A) 120
Configuration Single
D
G
S
N-Channel MOSFET
TO-263
S
D
G
Top View
ORDERING INFORMATION
Package TO-263
Lead (Pb)-free and Halogen-free SQM120N06-3m5L-GE3
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
60
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current
a
T
C
= 25 °C
I
D
120
A
T
C
= 125 °C 120
Continuous Source Current (Diode Conduction)
a
I
S
120
Pulsed Drain Current
b
I
DM
480
Single Pulse Avalanche Current
L = 0.1 mH
I
AS
100
Single Pulse Avalanche Energy E
AS
500 mJ
Maximum Power Dissipation
b
T
C
= 25 °C
P
D
375
W
T
C
= 125 °C 125
Operating Junction and Storage Temperature Range T
J
, T
stg
-55 to +175 °C
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mount
c
R
thJA
40
°C/W
Junction-to-Case (Drain) R
thJC
0.4
SQM120N06-3m5L
www.vishay.com
Vishay Siliconix
S13-2117-Rev. A, 07-Oct-13
2
Document Number: 63814
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0, I
D
= 250 μA 60 - -
V
Gate-Source Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 1.5 2.0 2.5
Gate-Source Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V V
DS
= 60 V - - 1
μA V
GS
= 0 V V
DS
= 60 V, T
J
= 125 °C - - 50
V
GS
= 0 V V
DS
= 60 V, T
J
= 175 °C - - 900
On-State Drain Current
a
I
D(on)
V
GS
= 10 V V
DS
5 V 120 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= 10 V I
D
= 30 A - 0.0028 0.0035
V
GS
= 10 V I
D
= 30 A, T
J
= 125 °C - - 0.0064
V
GS
= 10 V I
D
= 30 A, T
J
= 175 °C - - 0.0080
V
GS
= 4.5 V I
D
= 20 A - 0.0031 0.0039
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 30 A - 190 - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V V
DS
= 25 V, f = 1 MHz
- 11 755 14 700
pF Output Capacitance C
oss
- 1112 1400
Reverse Transfer Capacitance C
rss
- 481 605
Total Gate Charge
c
Q
g
V
GS
= 10 V V
DS
= 30 V, I
D
= 110 A
- 220 330
nC Gate-Source Charge
c
Q
gs
-35-
Gate-Drain Charge
c
Q
gd
-35-
Gate Resistance R
g
f = 1 MHz 0.6 1.3 2
Turn-On Delay Time
c
t
d(on)
V
DD
= 30 V, R
L
= 0.27
I
D
110 A, V
GEN
= 10 V, R
g
= 2.5
-1929
ns
Rise Time
c
t
r
-2335
Turn-Off Delay Time
c
t
d(off)
-83125
Fall Time
c
t
f
-3553
Source-Drain Diode Ratings and Characteristics
b
Pulsed Current
a
I
SM
--480A
Forward Voltage V
SD
I
F
= 50 A, V
GS
= 0 - 0.8 1.5 V
SQM120N06-3m5L
www.vishay.com
Vishay Siliconix
S13-2117-Rev. A, 07-Oct-13
3
Document Number: 63814
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
0
33
66
99
132
165
0 2 4 6 8 10
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
V
GS
= 10 V thru 4 V
V
GS
= 3 V
0
80
160
240
320
400
0 14 28 42 56 70
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
T
C
= 125 °C
T
C
= - 55 °C
T
C
= 25 °C
0
3000
6000
9000
12 000
15 000
0 12 24 36 48 60
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
C
iss
C
oss
C
rss
0
30
60
90
120
150
0 2 4 6 8 10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
T
C
= - 55 °C
T
C
= 125 °C
T
C
= 25 °C
0.000
0.002
0.004
0.006
0.008
0.010
0 20 40 60 80 100 120
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 10 V
0
2
4
6
8
10
0 50 100 150 200 250
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
I
D
= 110 A
P1-P3P4-P6P7-P9P10-P10

SQM120N06-3m5L_GE3

Mfr. #:
Buy SQM120N06-3m5L_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 60 V 120A 375 W AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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