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STF11N60M2-EP

P1-P3P4-P6P7-P9P10-P12P13-P14
Figure 13. Source-drain diode forward characteristics
GIPG150320161227SDF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0 1 2 3 4 5 6 7
V
SD
(V)
I
SD
(A)
T
j
= -50 °C
T
j
= 25 °C
T
j
= 150 °C
STF11N60M2-EP
Electrical characteristics curves
DS11598 - Rev 4
page 7/14
3 Test circuits
Figure 14. Test circuit for resistive load switching times
AM01468v1
V
D
R
G
R
L
D.U.T.
2200
μF
V
DD
3.3
μF
+
pulse width
V
GS
Figure 15. Test circuit for gate charge behavior
AM01469v1
47 kΩ
1 kΩ
47 kΩ
2.7 kΩ
1 kΩ
12 V
I
G
= CONST
100 Ω
100 nF
D.U.T.
+
pulse width
V
GS
2200
μF
V
G
V
DD
Figure 16. Test circuit for inductive load switching and
diode recovery times
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
A
A
B
B
R
G
G
D
S
100 µH
µF
3.3
1000
µF
V
DD
D.U.T.
+
_
+
fast
diode
Figure 17. Unclamped inductive load test circuit
AM01471v1
V
D
I
D
D.U.T.
L
V
DD
+
pulse width
V
i
3.3
µF
2200
µF
Figure 18. Unclamped inductive waveform
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
Figure 19. Switching time waveform
AM01473v1
0
V
GS
90%
V
DS
90%
10%
90%
10%
10%
t
on
t
d(on)
t
r
0
t
off
t
d(off)
t
f
STF11N60M2-EP
Test circuits
DS11598 - Rev 4
page 8/14
4 Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
and product status are available at: www.st.com. ECOPACK
®
is an ST trademark.
STF11N60M2-EP
Package information
DS11598 - Rev 4
page 9/14
P1-P3P4-P6P7-P9P10-P12P13-P14

STF11N60M2-EP

Mfr. #:
Buy STF11N60M2-EP
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 600 V, 0.550 Ohm typ., 7.5 A MDmesh M2 EP Power MOSFET in a TO-220FP package
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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