APTGT75DH120T3G Datasheet APTGT75DH120T3G | P1-P3

APTGT75DH120T3G

APTGT75DH120T3G – Rev 2 October, 2012

www.microsemi.com

1-6

Application

 Welding converters

 Switched Mode Power Supplies

 Switched Reluctance Motor Drives

Features

 Fast Trench + Field Stop IGBT3

Technology

- Low voltage drop

- Low tail current

- Switching frequency up to 20 kHz

- Soft recovery parallel diodes

- Low diode VF

- Low leakage current

- RBSOA and SCSOA rated

 Kelvin emitter for easy drive

 Very low stray inductance

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency

operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 Easy paralleling due to positive T

C

of V

CEsat

 RoHS Compliant

Absolute maximum ratings

Symbol Parameter Max ratings Unit

V

CES

Collector - Emitter Breakdown Voltage 1200 V

T

C

= 25°C

110

I

C

Continuous Collector Current

T

C

= 80°C

75

I

CM

Pulsed Collector Current T

C

= 25°C 175

A

V

GE

Gate – Emitter Voltage ±20 V

P

D

Maximum Power Dissipation

T

C

= 25°C

357 W

RBSOA Reverse Bias Safe Operating Area T

j

= 125°C 150A @ 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

23

R1

3230

CR3CR1

Q4

CR2 CR4

3129

19

722

3

4

18

8

Q1

15 16

13 14

16

15

182023 22

13

11

12

14

87

29

30

28 27 26

3

32

31

10

19

2

25

4

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

V

CES

= 1200V

I

C

= 75A @ Tc = 80°C

Asymmetrical - Bridge

Fast Trench + Field Stop IGBT3

P

ower Module

APTGT75DH120T3G

APTGT75DH120T3G – Rev 2 October, 2012

www.microsemi.com

2-6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

I

CES

Zero Gate Voltage Collector Current V

GE

= 0V, V

CE

= 1200V 250 µA

T

j

= 25°C 1.4 1.7 2.1

V

CE(sat)

Collector Emitter saturation Voltage

V

GE

=15V

I

C

= 75A

T

j

= 125°C 2.0

V

GE(th)

Gate Threshold Voltage V

GE

= V

CE

, I

C

= 3 mA 5.0 6.5 V

I

GES

Gate – Emitter Leakage Current V

GE

= 20V, V

CE

= 0V 400 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

ies

Input Capacitance 5340

C

oes

Output Capacitance 280

C

res

Reverse Transfer Capacitance

V

GE

= 0V

V

CE

= 25V

f = 1MHz

240

pF

Q

G

Gate charge

V

GE

=±15V, I

C

=75A

V

CE

=600V

0.7 µC

T

d(on)

Turn-on Delay Time 260

T

r

Rise Time 30

T

d(off)

Turn-off Delay Time 420

T

f

Fall Time

Inductive Switching (25°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 75A

R

G

= 4.7

70

ns

T

d(on)

Turn-on Delay Time 285

T

r

Rise Time 50

T

d(off)

Turn-off Delay Time 520

T

f

Fall Time

Inductive Switching (125°C)

V

GE

= ±15V

V

Bus

= 600V

I

C

= 75A

R

G

= 4.7

90

ns

E

on

Turn-on Switching Energy T

j

= 125°C 7

E

off

Turn-off Switching Energy

V

GE

= ±15V

V

Bus

= 600V

I

C

= 75A

R

G

= 4.7

T

j

= 125°C 8.1

mJ

I

sc

Short Circuit data

V

GE

≤15V ; V

Bus

= 900V

t

p

≤ 10µs ; T

j

= 125°C

300 A

Diode ratings and characteristics (CR2 & CR3)

Symbol Characteristic Test Conditions Min Typ Max Unit

V

RRM

Maximum Peak Repetitive Reverse Voltage

1200 V

T

j

= 25°C 250

I

RM

Maximum Reverse Leakage Current V

R

=1200V

T

j

= 125°C 500

µA

I

F

DC Forward Current

Tc = 80°C 75 A

T

j

= 25°C 1.6 2.1

V

F

Diode Forward Voltage I

F

= 75A

T

j

= 125°C 1.6

V

T

j

= 25°C 170

t

rr

Reverse Recovery Time

T

j

= 125°C 280

ns

T

j

= 25°C 7

Q

rr

Reverse Recovery Charge

T

j

= 125°C 14

µC

T

j

= 25°C 3

E

r

Reverse Recovery Energy

I

F

= 75A

V

R

= 600V

di/dt =2000A/µs

T

j

= 125°C 5.5

mJ

CR1 & CR4 are IGBT protection diodes only

APTGT75DH120T3G

APTGT75DH120T3G – Rev 2 October, 2012

www.microsemi.com

3-6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

IGBT 0.35

R

thJC

Junction to Case Thermal Resistance

Diode 0.58

°C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To Heatsink M5 2 3 N.m

Wt Package Weight 110 g

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

∆R

25

/R

25

5

%

B

25/85

T

25

= 298.15 K 3952

K

∆B/B T

C

=100°C 4

%





























TT

B

R

T

11

exp

25

85/25

25

SP3 Package outline (dimensions in mm)

See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTGT75DH120T3G

APTGT75DH120T3G

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