PMEG2015EH_EJ_3 © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 03 — 15 January 2010 3 of 9
NXP Semiconductors
PMEG2015EH; PMEG2015EJ
20 V, 1.5 A very low V
F
MEGA Schottky barrier rectifiers
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating are available on request.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
T
stg
storage temperature −65 +150 °C
Table 6. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
PMEG2015EH
[1][2]
--330K/W
[2][3]
--150K/W
PMEG2015EJ
[1][2]
--350K/W
[2][3]
--150K/W
R
th(j-sp)
thermal resistance from
junction to solder point
PMEG2015EH - - 60 K/W
PMEG2015EJ - - 55 K/W
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
F
forward voltage I
F
=10mA
[1]
- 240 270 mV
I
F
= 100 mA
[1]
- 300 350 mV
I
F
= 500 mA
[1]
- 400 460 mV
I
F
=1A
[1]
- 480 550 mV
I
F
=1.5A
[1]
- 560 660 mV
I
R
reverse current V
R
=5V - 5 10 μA
V
R
=8V - 7 20 μA
V
R
=10V - 8 30 μA
V
R
=15V - 10 50 μA
V
R
=20V - 15 70 μA
C
d
diode capacitance V
R
=1V; f=1MHz - 4050pF
