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MT18JDF1G72PDZ-1G9E2

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available at micron.com. Module speed grades correlate
with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
8GB (x72, ECC, DR) 240-Pin DDR3 VLP RDIMM
DRAM Operating Conditions
PDF: 09005aef8482a8a7
jdf18c1gx72pdz.pdf – Rev. G 8/15 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision E)
Values are for the MT41J512M8 DDR3 SDRAM only and are computed from values specified in the 4Gb (512 Meg x 8) com-
ponent data sheet.
Parameter Symbol 1866 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
720 657 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
792 756 mA
Precharge power-down current: Slow exit I
DD2P0
2
324 324 mA
Precharge power-down current: Fast exit I
DD2P1
2
666 576 mA
Precharge quiet standby current I
DD2Q
2
630 576 mA
Precharge standby current I
DD2N
2
630 576 mA
Precharge standby ODT current I
DD2NT
1
540 513 mA
Active power-down current I
DD3P
2
738 684 mA
Active standby current I
DD3N
2
738 684 mA
Burst read operating current I
DD4R
1
1728 1575 mA
Burst write operating current I
DD4W
1
1431 1287 mA
Refresh current I
DD5B
1
2340 2277 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
360 360 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
450 450 mA
All banks interleaved read current I
DD7
1
2421 2142 mA
RESET low current I
DD8
2
360 360 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
8GB (x72, ECC, DR) 240-Pin DDR3 VLP RDIMM
I
DD
Specifications
PDF: 09005aef8482a8a7
jdf18c1gx72pdz.pdf – Rev. G 8/15 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 8GB (Die Revision P)
Values are for the MT41K512M8 DDR3LSDRAM only and are computed from values specified in the 4Gb (512 Meg x 8)
component data sheet.
Parameter Symbol 1866 1600 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
1
360 342 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRECHARGE I
DD1
1
495 477 mA
Precharge power-down current: Slow exit I
DD2P0
2
198 180 mA
Precharge power-down current: Fast exit I
DD2P1
2
198 198 mA
Precharge quiet standby current I
DD2Q
2
270 270 mA
Precharge standby current I
DD2N
2
306 288 mA
Precharge standby ODT current I
DD2NT
1
297 270 mA
Active power-down current I
DD3P
2
270 270 mA
Active standby current I
DD3N
2
378 360 mA
Burst read operating current I
DD4R
1
1017 900 mA
Burst write operating current I
DD4W
1
1116 999 mA
Refresh current I
DD5B
1
1467 1458 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
2
270 270 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
2
414 414 mA
All banks interleaved read current I
DD7
1
1413 1260 mA
RESET low current I
DD8
2
234 234 mA
Notes:
1. One module rank in the active I
DD
, the other rank in I
DD2P0
(slow exit).
2. All ranks in this I
DD
condition.
8GB (x72, ECC, DR) 240-Pin DDR3 VLP RDIMM
I
DD
Specifications
PDF: 09005aef8482a8a7
jdf18c1gx72pdz.pdf – Rev. G 8/15 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P20

MT18JDF1G72PDZ-1G9E2

Mfr. #:
Buy MT18JDF1G72PDZ-1G9E2
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 8GB 240RDIMM
Lifecycle:
New from this manufacturer.
Delivery:
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