IRFS9N60ATRRPBF Datasheet IRFS9N60APBF, IRFS9N60ATRRPBF, IRFS9N60ATRLPBF | P1-P3

IRFS9N60A, SiHFS9N60A

www.vishay.com

Vishay Siliconix

S16-0763-Rev. D, 02-May-16

1

Document Number: 91287

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Low gate charge Q

g

results in simple drive

requirement

• Improved gate, avalanche and dynamic dV/dt

ruggedness

• Fully characterized capacitance and avalanche

voltage and current

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

*

This datasheet provides information about parts that are



RoHS-compliant and / or parts that are non-RoHS-compliant. For



example, parts with lead (Pb) terminations are not RoHS-compliant.



Please see the information / tables in this datasheet for details.

APPLICATIONS

• Switch mode power supply (SMPS)

• Uninterruptible power supply

• High speed power switching

APPLICABLE OFF LINE SMPS TOPOLOGIES

• Active clamped forward

•Main switch

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Starting T

J

= 25 °C, L = 6.8 mH, R

g

= 25 , I

AS

= 9.2 A (see fig. 12).

c. I

SD

 9.2 A, dI/dt  50 A/μs, V

DD

 V

DS

, T

J

 150 °C.

d. 1.6 mm from case.

PRODUCT SUMMARY

V

DS

(V) 600

R

DS(on)

()V

GS

= 10 V 0.75

Q

g

max. (nC) 49

Q

gs

(nC) 13

Q

gd

(nC) 20

Configuration Single

N-Channel MOSFET

G

D

S

D

2

PAK (TO-263)

G

D

S

Available

ORDERING INFORMATION

Package D

2

PAK (TO-263) D

2

PAK (TO-263) D

2

PAK (TO-263)

Lead (Pb)-free and Halogen-free SiHFS9N60A-GE3 SiHFS9N60ATRR-GE3

a

SiHFS9N60ATRL-GE3

a

Lead (Pb)-free

IRFS9N60APbF IRFS9N60ATRRPbF

a

IRFS9N60ATRLPbF

a

SiHFS9N60A-E3 SiHFS9N60ATR-E3

a

SiHFS9N60ATL-E3

a

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

600

V

Gate-Source Voltage V

GS

± 30

Continuous Drain Current V

GS

at 10 V

T

C

= 25 °C

I

D

9.2

AT

C

= 100 °C 5.8

Pulsed Drain Current

a

I

DM

37

Linear Derating Factor 1.3 W/°C

Single Pulse Avalanche Energy

b

E

AS

290 mJ

Repetitive Avalanche Current

a

I

AR

9.2 A

Repetitive Avalanche Energy

a

E

AR

17 mJ

Maximum Power Dissipation T

C

= 25 °C P

D

170 W

Peak Diode Recovery dV/dt

c

dV/dt 5.0 V/ns

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +150

°C

Soldering Recommendations (Peak temperature)

d

for 10 s 300

IRFS9N60A, SiHFS9N60A

www.vishay.com

Vishay Siliconix

S16-0763-Rev. D, 02-May-16

2

Document Number: 91287

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width  300 μs; duty cycle  2 %.

c. C

oss

eff. is a fixed capacitance that gives the same charging time as C

oss

while V

DS

is rising from 0 to 80 % V

DS

.

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL TYP. MAX. UNIT

Maximum Junction-to-Ambient R

thJA

-40

°C/W

Maximum Junction-to-Case (Drain) R

thJC

-0.75

SPECIFICATIONS (T

J

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= 250 μA 600 - - V

V

DS

Temperature Coefficient

V

DS

/T

J

Reference to 25 °C, I

D

= 1 mA

-0.66-

V/°C

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.0 - 4.0 V

Gate-Source Leakage I

GSS

V

GS

= ± 30 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

DS

= 600 V, V

GS

= 0 V - - 25

μA

V

DS

= 480 V, V

GS

= 0 V, T

J

= 125 °C - - 250

Drain-Source On-State Resistance R

DS(on)

V

GS

= 10 V I

D

= 5.5 A

b

- - 0.75 

Forward Transconductance g

fs

V

DS

= 25 V, I

D

= 3.1 A 5.5 - - S

Dynamic

Input Capacitance C

iss

V

GS

= 0 V,

V

DS

= 25 V,

f = 1.0 MHz, see fig. 5

- 1400 -

pF

Output Capacitance C

oss

- 180 -

Reverse Transfer Capacitance C

rss

-7.1-

Output Capacitance C

oss

V

GS

= 0 V

V

DS

= 1.0 V, f = 1.0 MHz - 1957 -

V

DS

= 480 V, f = 1.0 MHz - 49 -

Effective Output Capacitance C

oss

eff. V

DS

= 0 V to 480 V

c

-96-

Total Gate Charge Q

g

V

GS

= 10 V

I

D

= 9.2 A, V

DS

= 400 V

see fig. 6 and 13

b

--49

nC Gate-Source Charge Q

gs

--13

Gate-Drain Charge Q

gd

--20

Turn-On Delay Time t

d(on)

V

DD

= 300 V, I

D

= 9.2 A

R

g

= 9.1 , R

D

= 35.5

see fig. 10

b

-13-

ns

Rise Time t

r

-25-

Turn-Off Delay Time t

d(off)

-30-

Fall Time t

f

-22-

Gate Input Resistance R

g

f = 1 MHz, open drain 0.5 - 3.2 

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current I

S

MOSFET symbol

showing the 

integral reverse

p - n junction diode

--9.2

A

Pulsed Diode Forward Current

a

I

SM

--37

Body Diode Voltage V

SD

T

J

= 25 °C, I

S

= 9.2 A, V

GS

= 0 V

b

--1.5V

Body Diode Reverse Recovery Time t

rr

T

J

= 25 °C, I

F

= 9.2 A, dI/dt = 100 A/μs

b

- 530 800 ns

Body Diode Reverse Recovery Charge Q

rr

-3.04.4μC

Forward Turn-On Time t

on

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

and L

D

)

S

D

G

IRFS9N60A, SiHFS9N60A

www.vishay.com

Vishay Siliconix

S16-0763-Rev. D, 02-May-16

3

Document Number: 91287

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

0.1

1

10

100

0.1 1 10 100

20µs PULSE WIDTH

T = 25 C

J

°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.7V

1

10

100

1 10 100

20µs PULSE WIDTH

T = 150 C

J

°

TOP

BOTTOM

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.7V

V , Drain-to-Source Voltage (V)

I , Drain-to-Source Current (A)

DS

D

4.7V

0.1

1

10

100

4.0 5.0 6.0 7.0 8.0 9.0 10.0

V = 50V

20µs PULSE WIDTH

DS

V , Gate-to-Source Voltage (V)

I , Drain-to-Source Current (A)

GS

D

T = 25 C

J

°

T = 150 C

J

°

-60 -40 -20 0 20 40 60 80 100 120 140 160

0.0

0.5

1.0

1.5

2.0

2.5

3.0

T , Junction Temperature ( C)

r

DS(on)

, Drain-to-Source On Resistance

(Normalized)

J

°

V =

I =

GS

D

10V

9.2A

IRFS9N60ATRRPBF

IRFS9N60ATRRPBF

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