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DMN21D2UFB-7B

P1-P3P4-P6
DMN21D2UFB
Document number: DS35564 Rev. 5 - 2
1 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN21D2UFB
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON)
max
I
D
max
T
A
= 25°C
20V
0.99 @ V
GS
= 4.5V
760mA
1.2 @ V
GS
= 2.5V
700mA
2.4 @ V
GS
= 1.8V
500mA
3.0 @ V
GS
= 1.5V
350mA
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• General Purpose Interfacing Switch
• Power Management Functions
• Analog Switch
Features and Benefits
• Low On-Resistance
• Very low Gate Threshold Voltage, 1.0V max
• Low Input Capacitance
• Fast Switching Speed
• Ultra-Small Surface Mount Package 1mm x 0.6mm
• Low Package Profile, 0.5mm Maximum Package height
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: X1-DFN1006-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Ordering Information (Note 4)
Part Number Marking Reel size (inches) Tape width (mm) Quantity per reel
DMN21D2UFB-7B NN 7 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NN = Product Type Marking Code
NN
Top View
Bar Denotes Gate and Source Side
DMN21D2UFB-7B
ESD PROTECTED
D
S
G
Bottom View
Top View
Package Pin Configuration
Equivalent Circuit
X1-DFN1006-3
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
e4
DMN21D2UFB
Document number: DS35564 Rev. 5 - 2
2 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN21D2UFB
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
20 V
Gate-Source Voltage
V
GSS
±12 V
Continuous Drain Current (Note 6) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
760
610
mA
t<5s
T
A
= 25°C
T
A
= 70°C
I
D
850
700
mA
Maximum Continuous Body Diode Forward Current (Note 6)
I
S
0.8 A
Pulsed Drain Current (Note 7)
I
DM
1.0 A
Thermal Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
T
A
= 25°C
P
D
0.38
W
T
A
= 70°C
0.25
Thermal Resistance, Junction to Ambient (Note 4)
Steady State
R
θ
JA
325
°C/W
t<5s 244
Total Power Dissipation (Note 5)
T
A
= 25°C
P
D
0.9
W
T
A
= 70°C
0.57
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θ
JA
141
°C/W
t<5s 106
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150
°C
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250A
Zero Gate Voltage Drain Current @T
c
= 25°C I
DSS
- - 100 nA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- - ±1 A
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS
(
th
)
0.4 - 1.0 V
V
DS
= V
GS
, I
D
= 250A
Static Drain-Source On-Resistance
R
DS (ON)
- 0.6 0.99
Ω
V
GS
= 4.5V, I
D
= 100mA
- 0.7 1.2
V
GS
= 2.5V, I
D
= 50mA
- 0.9 2.4
V
GS
= 1.8V, I
D
= 20mA
- 1.2 3.0
V
GS
= 1.5V, I
D
= 10mA
Forward Transfer Admittance
|Y
fs
|
180 - - mS
V
DS
= 10V, I
D
= 400mA
Diode Forward Voltage
V
SD
- 0.6 1.0 V
V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 27.6 - pF
V
DS
= 16V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 4.0 - pF
Reverse Transfer Capacitance
C
rss
- 2.8 - pF
Total Gate Charge V
GS
= 4.5V Q
g
- 0.41 - nC
V
DS
= 10V, I
D
= 250mA
Total Gate Charge V
GS
= 10V Q
g
- 0.93 - nC
Gate-Source Charge
Q
g
s
- 0.06 - nC
Gate-Drain Charge
Q
g
d
- 0.06 - nC
Turn-On Delay Time
t
D
(
on
)
- 3.5 - ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47, R
G
= 10,
I
D
= 200mA
Turn-On Rise Time
t
r
- 4.2 - ns
Turn-Off Delay Time
t
D
(
off
)
- 19.6 - ns
Turn-Off Fall Time
t
f
- 9.8 - ns
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6.
Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN21D2UFB
Document number: DS35564 Rev. 5 - 2
3 of 6
www.diodes.com
May 2012
© Diodes Incorporated
DMN21D2UFB
NEW PRODUCT
ADVANCE INFORMATION
ADVANCE INFORMATION
0
0.2
0.4
0.6
0.8
1.0
0 0.5 1.0 1.5 2.0
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V= 1.2V
GS
V= 1.5V
GS
V= 1.8V
GS
V= 2.0V
GS
V= 2.5V
GS
V= 4.5V
GS
V= 8.0V
GS
0.2
0.4
0.6
0.8
01 23
1.0
0
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 2 Typical Transfer Characteristics
I, D
AIN
EN
(A)
D
V = 5.0V
DS
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
0.2
0.4
0.6
0.8
1.2
1.4
1.6
0 0.2 0.4 0.6 0.8 1.0
1.0
0
I , DRAIN-SOURCE CURRENT (A)
D
Fig. 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
V = 4.5V
GS
V = 2.5V
GS
V= 1.8V
GS
V = 1.5V
GS
0.2
0.4
0.6
0.8
1.2
12345678 910
1.0
0
V , GATE-SOURCE VOLTAGE (V)
GS
Fig. 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(ON)
Ω
I = 100mA
D
0.2
0.4
0.6
0.8
0 0.2 0.4 0.6 0.8 1.0
1.0
0
I , DRAIN CURRENT (A)
D
Fig. 5 Typical On-Resistance vs.
Drain Current and Temperature
, D
AIN-S
U
CE
N-
ESISTANCE ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Fig. 6 On-Resistance Variation with Temperature
J
°
0.6
0.8
1.0
1.2
1.4
1.6
, D
AIN-S
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
V = 4.5V
I = 500mA
GS
D
V= V
I = 250mA
GS
D
2.5
P1-P3P4-P6

DMN21D2UFB-7B

Mfr. #:
Buy DMN21D2UFB-7B
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K
Lifecycle:
New from this manufacturer.
Delivery:
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